材料期刊网

Electrons with energies of 20, 200, and 400 keV were used in electron-beam-induced deposition (EBID) to investigate deposition on both the top and bottom surfaces of a film substrate when an electron beam is injected into the top surface. Tungsten tips were successfully fabricated on the-bottom surface of the film substrate using 200 and 400 keV electrons. The microstructure as-deposited at a different electron energy,is a mixture of nanocrystallites and amorphous materials. The nanocrystallites of the structure deposited using 20 keV electrons (1-2 nm) were smaller than those of the structures deposited using 200 keV (2-4 nm) and 400 keV electrons (3-5 nm). The proportion of amorphous materials in the as-deposited structure was reduced using high-energy electrons. There was no difference in microstructure between the top and bottom tips simultaneously deposited on the film substrate using high-energy electrons.