Effect of Annealing Temperature on the Ferroelectric Properties of BiFeO3 Thin Films Prepared by Sol-gel Process

武汉理工大学学报-材料科学版(英文版), 2010, 25(3): 384-387. doi: 10.1007/s11595-010-0006-2

^1, , ^2, , ^3, , ^4, , ^5, , ^6, , ^7,

1.Hubei Key Laboratory of Pollutant Analysis & Reuse Technology, Huangshi 435002, China;School of Computer Science and Technology, Huangshi Institue of Technology, Huangshi 435003, China

2.College of Physics and Electronic Science, Hubei National University, Huangshi 435002, China

3.School of Computer Science and Technology, Huangshi Institue of Technology, Huangshi 435003, China

4.School of Computer Science and Technology, Huangshi Institue of Technology, Huangshi 435003, China

5.School of Computer Science and Technology, Huangshi Institue of Technology, Huangshi 435003, China

6.School of Computer Science and Technology, Huangshi Institue of Technology, Huangshi 435003, China

7.Hubei Key Laboratory of Pollutant Analysis & Reuse Technology, Huangshi 435002, China;School of Computer Science and Technology, Huangshi Institue of Technology, Huangshi 435003, China

基金项目: the National Natural Science Foundation of China(10874075) the Key Program of Hubei Province Education Committee(D20082203)

Effect of Annealing Temperature on the Ferroelectric Properties of BiFeO3 Thin Films Prepared by Sol-gel Process

WANG Xiuzhang ^1, , YAN Bowu ^2, , DAI Zhigao ^3, , LIU Meifeng ^4, , XU Shengxiang ^5, , LI Wenqing ^6, , LIU Hongri ^7,

1.Hubei Key Laboratory of Pollutant Analysis & Reuse Technology, Huangshi 435002, China;School of Computer Science and Technology, Huangshi Institue of Technology, Huangshi 435003, China

2.College of Physics and Electronic Science, Hubei National University, Huangshi 435002, China

3.School of Computer Science and Technology, Huangshi Institue of Technology, Huangshi 435003, China

4.School of Computer Science and Technology, Huangshi Institue of Technology, Huangshi 435003, China

5.School of Computer Science and Technology, Huangshi Institue of Technology, Huangshi 435003, China

6.School of Computer Science and Technology, Huangshi Institue of Technology, Huangshi 435003, China

7.Hubei Key Laboratory of Pollutant Analysis & Reuse Technology, Huangshi 435002, China;School of Computer Science and Technology, Huangshi Institue of Technology, Huangshi 435003, China

Keywords： multiferroics

Sol-gel process was adopted to prepare BiFeO3 films . BiFeO3 films were deposited on LaNiO3 coated Si(100) substrates annealed at 500 and 550 ℃, respectively . The X-ray diffraction results reveal that BiFeO3 film has a rhombohedrally distorted perovskite structure with space group R3c . The film annealed at 500 ℃ has larger remnant polarization (Pr) of 35 .3 μC/cm2 . For the film annealed at 550 ℃, smaller remnant polarization of P4=4 .8μC/cm2 is observed for its low breakdown electric field . Lower leakage conduction is observed in the film annealed at 500 ℃ at low applied field .

参考文献

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