The stress relaxation of<'74>Ge<'+>-implanted (100) silicon wafers was investigated. The implantation energy as a function of Si/Si<,1-x>Ge<,x>/Si struc- ture fluence and two kinds of thermal annealing were reported. The stress and stress relaxation after thermal annealing were calculated on the basis of Raman analysis, and were compared with those obtained from the calculation of virgin Si.
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