Grinding residual stresses of silicon wafers affect the performance of IC circuits. Based on the wafer rotation ultra-precision grinding ma- chine, the residual stress distribution along grinding marks and ground surface layer depth of the ground wafers are investigated using Raman microspectroscopy. The results show that the ground wafer surfaces mainly present compressive stress. The vicinity of pile-ups between two grinding marks presents higher a compressive stress. The stress value of the rough ground wafer is the least because the material is removed by the brittle fracture mode. The stress of the semi-fine ground wafer is the largest because the wafer surface presents stronger phase transformations and elastic-plastic deformation. The stress of the fine ground wafer is between the above two. The strained layer depths for the rough, semi-fine, and fine ground wafers are about 7.6 μm, 2.6 μm, and 1.1 μm, respectively. The main reasons for generation of residual stresses are phase transformations and elastic-plastic deformation.
参考文献
| [1] | Tonshoff H.K;Schmieden W.V;Inasakii I;Konig W.,and Spur G .Abrasive machining of silicon[J].CIRP Aunals-Manufacturing Technology,1990,39(02):621. |
| [2] | Pei Z.J;Strasbaugh A .Fine grinding of silicon wafers:designed experiment[J].International Journal of Machine Tools and Manufacture,2002,42:395. |
| [3] | Zarudi I;Zhang L .Subsurface damage in single-crystal silicon due to grinding and polishing[J].Journal of Materials Science Letters,1996,15:586. |
| [4] | Chen J.;De Wolf I. .Study of damage and stress induced by backgrinding in Si wafers[J].Semiconductor Science and Technology,2003(4):261-268. |
| [5] | De Wolf L .Micro-Raman spectroscopy to study local mechanical stress in silicon integrated circuits[J].Semiconductor Science and Technology,1996,11:139. |
| [6] | Clao C.L;Ma K.J;Chang Y;Lin H.Y .Relieving the residual stress on machined silicon wafers:a comparison between rapid thermal annealing (RTA) and chemical etching processes[J].Journal of Chung Cheng Institute of Technology,2000,29(01):63. |
| [7] | Gogotsi Y;Zhou G.H;Ku S.S;Cetinkunt S .Raman microspectroscopy analysis of pressure-induced metallization in scratching of silicon[J].Semiconductor Science and Technology,2001,16:345. |
| [8] | V. Jardret;H. Zahouani;J. L. Loubet;T. G. Mathia .Understanding and quantification of elastic and plastic deformation during a scratch test[J].Wear: an International Journal on the Science and Technology of Friction, Lubrication and Wear,1998(1):8-14. |
| [9] | Zhang Y.X;Gao W;Kang R.K;Guo D.M .Study on the hase transformations of the ground monocrystalline silicon wafers surfaces[J].Optics and Precision Engineering,2008,16(08):1440. |
- 下载量()
- 访问量()
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%