Effects of dopant content on optical and electrical properties of In2O3: W transparent conductive films

稀有金属（英文版）, 2012, 31(2): 168-171. doi: 10.1007/s12598-012-0485-8

^1, , ^2, , ^3, , ^4, , ^5, , ^6,

1.School of Physics and Nuclear Energy Engineering, Beijing University of Aeronautics and Astronautics, Beijing 100191, China

2.School of Physics and Nuclear Energy Engineering, Beijing University of Aeronautics and Astronautics, Beijing 100191, China

3.School of Physics and Nuclear Energy Engineering, Beijing University of Aeronautics and Astronautics, Beijing 100191, China

4.School of Physics and Nuclear Energy Engineering, Beijing University of Aeronautics and Astronautics, Beijing 100191, China

5.School of Physics and Nuclear Energy Engineering, Beijing University of Aeronautics and Astronautics, Beijing 100191, China

6.School of Physics and Nuclear Energy Engineering, Beijing University of Aeronautics and Astronautics, Beijing 100191, China

Effects of dopant content on optical and electrical properties of In2O3: W transparent conductive films

ZHANG Yuanpeng ^1, , LI Yuan ^2, , LI Chunzhi ^3, , WANG Wenwen ^4, , ZHANG Junying ^5, , WANG Rongming ^6,

1.School of Physics and Nuclear Energy Engineering, Beijing University of Aeronautics and Astronautics, Beijing 100191, China

2.School of Physics and Nuclear Energy Engineering, Beijing University of Aeronautics and Astronautics, Beijing 100191, China

3.School of Physics and Nuclear Energy Engineering, Beijing University of Aeronautics and Astronautics, Beijing 100191, China

4.School of Physics and Nuclear Energy Engineering, Beijing University of Aeronautics and Astronautics, Beijing 100191, China

5.School of Physics and Nuclear Energy Engineering, Beijing University of Aeronautics and Astronautics, Beijing 100191, China

6.School of Physics and Nuclear Energy Engineering, Beijing University of Aeronautics and Astronautics, Beijing 100191, China

Keywords： In2O3: W thin film

The In2O3:W (IWO) films with different W content were deposited on glass substrate using direct current sputtering method. The structure, surface morphology, and optical and electrical properties were investigated. Results showed that both the carrier concentration and carrier mobility were increased with the doping of W. The IWO film with the lowest resistivity of 1. 0× 10-3 Ω· cm, highest carrier mobility of 43. 7 cm2. W-1. s-1 and carrier concentration of 1. 4× 1020 cm-3 was obtained at the content of 2. 8 wt. ％. The average optical transmittance from 300 nm to 900 nm reached 87. 6％.

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