欢迎登录材料期刊网

材料期刊网

高级检索

In magnetic Czochralski (MCZ) silicon growth,the distance and diameter of the electrified coils may affect the magnetic field intensity and melt flow.By changing the above parameters,the optimum geometric configuration of the coils was attempted.Through analyses of the oxygen concentration distribution o f the crystal/melt interface,axial and radial velocity distribution of melt and the magnetic field intensity in the melt,it is found that smaller diameter of coils contributes to reducing the needed current intensity and production costs.For a given current intensity,there is a best distance of coils when the oxygen concentration at crystal/melt interface reaches the lowest.

参考文献

[1] Que D.L;Chen X.Z.Science and Technology of Silicon Materials[M].Zhejiang University Press,Zhejiang,2000:214.
[2] CAO Jianwei,GAO Yu,CHEN Ying,ZHANG Guohu,QIU Minxiu.Simulation aided hot zone design for faster growth of CZ silicon mono crystals[J].稀有金属(英文版),2011(02):155-159.
[3] Series R.W .Effect of a shaped magnetic field on Czochralski silicon growth[J].Journal of Crystal Growth,1989,97(01):92.
[4] Peter Rudolph .Travelling magnetic fields applied to bulk crystal growth from the melt:the step from basic research to industrial scale[J].Journal of Crystal Growth,2008,310(7-9):1298.
[5] Ozoe H;Iwamoto M .Combined effects of crucible rotation and horizontal magnetic field on dopant concentration in a Czochralski melt[J].Journal of Crystal Growth,1994,142(1-2):236.
[6] Kakimoto K.;Eguchi M.;Yi KW. .OXYGEN TRANSFER DURING SINGLE SILICON CRYSTAL GROWTH IN CZOCHRALSKI SYSTEM WITH VERTICAL MAGNETIC FIELDS[J].Journal of Crystal Growth,1996(3):238-242.
[7] Hirata H;Hoshikawa K .Three-dimensional numerical analyses of effects of cusp magnetic field on the flows,oxygen transport and heat transfer in a Czochralski silicon melt[J].Journal of Crystal Growth,1992,125(1-2):181.
[8] Sim B.C;Lee I.K;Kim K.H;Lee H.W .Oxygen concentration in the Czochralski-grown crystals with cusp-magnetic field[J].Journal of Crystal Growth,2005,275(3-4):455.
[9] Yu H.P;Sui Y.K;Zhang F.Y;Chang X.A .Numerical simulation of the distribution of the oxygen concentration in 300mm CZ Si melt under a cusp magnetic field[J].Journal of Semiconductors,2005,26(03):253.
[10] Hirata H;Hoshikawa K .Silicon crystal growth in a cusp magnetic field[J].Journal of Crystal Growth,1989,96(04):747.
[11] Koichi Kakimoto.Czochralski silicon single crystals for semiconductor and solar cell applications[M].Physics and Astronomy,2010:231.
[12] Kalaev V.V;Yu I;Evstratov;Makarov Yu.N .Gas flow effect on global heat transport and melt convection in Czochralski silicon growth[J].Journal of Crystal Growth,2003,249(2-4):87.
[13] Chen Jyh-Chen;Teng Y.Y;Wun W.T;Lu C.W Chen Hsueh-I,Chen C.Y .and Lan Wen-Chieh,Numerical simulation of oxygen transport during the CZ silicon crystal growth process[J].Journal of Crystal Growth,2011,318(01):318.
[14] Gunjal Prashant R;Ramachandran Palghat A .Tailoring the oxygen distribution in 300mm Czochralski crystal of pure silicon using cusp magnetic field[J].Process in Computational Fluid Dynamics,2010,10(5-6):307.
[15] Simulation of the thermal fluctuation according to the melt height in a CZ growth system[J].Journal of Crystal Growth,2010(8):p.1453.
上一张 下一张
上一张 下一张
计量
  • 下载量()
  • 访问量()
文章评分
  • 您的评分:
  • 1
    0%
  • 2
    0%
  • 3
    0%
  • 4
    0%
  • 5
    0%