Influence of Annealing Temperature on the Microstructure and Electrical Properties of Indium Tin Oxide Thin Films

金属学报(英文版), 2014, 27(2): 368-372. doi: 10.1007/s40195-014-0059-x

^1, , ^2, , ^3, , ^4, , ^5, , ^6,

1.State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China

2.State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China

3.State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China

4.State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China

5.State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China

6.School of Material Science and Engineering, Xihua University,Chengdu 610039, China

Influence of Annealing Temperature on the Microstructure and Electrical Properties of Indium Tin Oxide Thin Films

Yinzhi Chen ^1, , Hongchuan Jiang ^2, , Shuwen Jiang ^3, , Xingzhao Liu ^4, , Wanli Zhang ^5, , Qinyong Zhang ^6,

1.State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China

2.State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China

3.State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China

4.State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China

5.State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China

6.School of Material Science and Engineering, Xihua University,Chengdu 610039, China

Keywords： Indium tin oxide

参考文献

[1]	T.S. Sathiaraj .Effect Of Annealing On The Structural, Optical And Electrical Properties Of Ito Films By Rf Sputtering Under Low Vacuum Level[J].Microelectronics journal,2008(12):1444-1451.
[2]	S. Bhagwat;R. P. Howson .Use of the magnetron-sputtering technique for the control of the properties of indium tin oxide thin films[J].Surface & Coatings Technology,1999(2/3):163-171.

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