Anomalous Resistivity in Vanadium-Doped Semi-Insulating 4H-SiC Wafers

金属学报(英文版), 2014, 27(6): 1083-1087. doi: 10.1007/s40195-014-0129-0

Xianglong Yang ^1, , Kun Yang ^2, , Yingxin Cui ^3, , Yan Peng ^4, , Xiufang Chen ^5, , Xuejian Xie ^6, , Xiaobo Hu ^7,

1.State Key Laboratory of Crystal Materials, Shandong University,Jinan 250100, China

2.State Key Laboratory of Crystal Materials, Shandong University,Jinan 250100, China

3.State Key Laboratory of Crystal Materials, Shandong University,Jinan 250100, China

4.State Key Laboratory of Crystal Materials, Shandong University,Jinan 250100, China

5.State Key Laboratory of Crystal Materials, Shandong University,Jinan 250100, China

6.State Key Laboratory of Crystal Materials, Shandong University,Jinan 250100, China

7.State Key Laboratory of Crystal Materials, Shandong University,Jinan 250100, China

基金项目: This work was financially supported by National Basic Research Program of China (No.2011CB301904) and the Natural Science Foundation of China (Nos.11134006 and 61327808).

Anomalous Resistivity in Vanadium-Doped Semi-Insulating 4H-SiC Wafers

Keywords： SiC

参考文献

[1]	M. Bickermann;R. Weingaertner;A. Winnacker .On the preparation of vanadium doped PVT grown SiC boules with high semi-insulating yield[J].Journal of Crystal Growth,2003(3/4):390-399.

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Anomalous Resistivity in Vanadium-Doped Semi-Insulating 4H-SiC Wafers

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