采用溶胶?凝胶法在纯钛基体上制备Zn掺杂纳米TiO2薄膜(Zn?TiO2)，研究不同热处理温度下Zn 掺杂对纳米TiO2薄膜的物理性能、光阴极保护效果和光电化学性能的影响。研究表明，与未掺杂TiO2薄膜相比，Zn的加入提高了Zn?TiO2薄膜的光电化学响应，在300°C热处理后的薄膜使金属基体的电极电位下降最大，降低了897 mV。SEM?EDS分析表明，Zn在掺杂薄膜中的分布不均匀，XRD结果显示Zn掺杂的薄膜比未掺杂的薄膜晶粒更细小。红外光谱结果表明，TiO2晶粒表面有Zn—O键生成。紫外光谱表明，Zn掺杂使Zn?TiO2吸收带边红移，扩大了TiO2的光响应范围。根据Mott?Shottky曲线可知，Zn?TiO2薄膜比纯TiO2薄膜的平带电位更负，载流子量更大。这说明在平带电位、载流子量和空间电荷层宽度的协同作用下，300°C热处理后的Zn?TiO2薄膜表现了最佳的光电化学响应。
Zn-doped TiO2 (Zn?TiO2) thin films were prepared by the sol?gel method on titanium substrates with heat treatment at different temperatures. The effects of heat treatment temperatures and Zn doping on the structure, photocathodic protection and photoelectrochemical properties of TiO2 thin films were investigated. It is indicated that the photoelectrical performance of the Zn?TiO2 films is enhanced with the addition of Zn element compared with the pure-TiO2 film and the largest decline by 897 mV in the electrode potential is achieved under 300 °C heat treatment. SEM?EDS analyses show that Zn element is unevenly distributed in Zn?TiO2 films; XRD patterns reveal that the grain size of Zn?TiO2 is smaller than that of pure-TiO2; FTIR results indicate that Zn—O bond forms on Zn?TiO2 surface. Ultraviolet visible absorption spectra prove that Zn?TiO2 shifts to visible light region. Mott?Shottky curves show that the flat-band potential of Zn?TiO2 is more negative and charge carrier density is bigger than that of pure-TiO2, implying that under the synergy of the width of the space-charge layer, carrier density and flat-band potential, Zn?TiO2 with 300 °C heat treatment displays the best photocathodic protection performance.
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