以硫氰酸铵和氯化镉为原料，采用无模板混合高温煅烧法一步合成氮化碳/硫化镉纳米晶(C3N4/CdS)的复合半导体材料。采用X射线衍射、傅立叶变换红外光谱和透射电镜等技术对其结构和形貌进行了表征。以有机污染物罗丹明B (RhB)为模拟污染物对复合催化剂的可见光催化活性进行测试。结果表明， C3N4/CdS复合材料中CdS以六方相纳米晶的形式均匀分散； CdS的复合基本不改变C3N4主体结构及聚合度；与纯C3N4相比，复合材料在可见区的光吸收能力有所增强。合适的能带匹配有利于光生载流子的迁移，抑制了其复合速率。在可见光照射下，复合半导体能够更加快速的降解有机污染物，且保持很好的稳定性。
A hybrid semiconductor composed of a carbon nitride/cadmium sulfide nanocomposite (C3N4/CdS) was synthesized by a template‐free one‐step calcination route at high temperature using ammoni‐um thiocyanate and cadmium chloride as starting materials. The crystal structure, composition and morphology of the hybrid samples were studied by X‐ray diffraction, Fourier transform infrared spectroscopy and transmission electron microscopy. The photocatalytic degradation of Rhodamine B as a model compound was carried out to evaluate the photocatalytic activity of the nanocompo‐sites under visible light irradiation. Hexagonal CdS nanocrystals were uniformly distributed in the bulk C3N4. After coupling with CdS the basic C3N4 structure was mostly unchanged. The visible light absorption properties of the hybrid materials were enhanced. The as‐prepared C3N4/CdS hybrid photocatalyst exhibited superior degradation performance under visible light irradiation compared with pure C3N4. The well‐matched band energy improved the transfer efficiency of the photoin‐duced carriers and this was responsible for the enhanced photocatalytic activity and stability of the hybrid photocatalysts.
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