采用热丝化学气相沉积法,改变工作气压和偏流,在硅基片上沉积了高掺硼金刚石膜.利用扫描电镜(SEM)、拉曼光谱和X射线衍射仪对沉积的金刚石膜表面形貌和结构进行表征.结果显示:当气体压强从3kPa降低到1. 5kPa时,金刚石膜有较平的表面形貌和和较好的晶形,薄膜的晶体性质得到良好的改善.但是继续降气体压强,从1.5kPa到 0.5kPa时,却呈现出相反的趋势.固定气体压强(1. 5kPa),改变偏流,结果表明:适当的偏流(3A)可以改善掺硼金刚石的质量,偏流较高会导致薄膜中非金刚石相增多.
Highly boron-doped diamond (BDD) films were deposited by hot filament chemical vapor deposition on a silicon substrate with different gas pressures and bias currents. The surface morphology and the structure of the diamond films were analyzed by scanning electron microscopy, Raman spectroscopy, and X-ray diffraction. Results indicated that the quality of the highly BDD films tended to be improved when the gas pressure decreased from 3 to 1.5kPa, whereas they showed an opposite trend with a further decrease of the gas pressure from 1.5 to 0.5 kPa. An appropriate bias current (3A) was favorable in improving the qualities of the diamond films and a higher bias current led to an increase of the non-diamond phase in the films.
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