Our latest research results on GaAs-AlGaAs multiple quantum well spatial light modulators are presented.The thickness uniformity of the epitaxial layers across the 3-inch wafer grown by our molecular beam epitaxy is better than 0.1% and the variation of cavity resonance wavelength within the wafer is only 0.9 nm. A contrast ratio (CR) of 102 by varying bias voltage from 0 to 6.7 V is achieved after fine tuning the cavity by etching an adjust layer. Both theoretical and experimental results demonstrate that incorporating an adjust layer is an effective tuning method for obtaining high CR.
参考文献
[1] | Miller D A B,Chemla D S,Damen T C,et al.Band-edge electroabsorption in quantum well structures:the quantum-confined Stark effect.Phys Rev Lett,1984,53(22):2173 |
[2] | Boyd G D,Miller D A B,Chemla D S,et al.Multiple quantum well reflection modulator.Appl Phys Lett,1987,50(17):1119 |
[3] | Whitehead M,Parry G.High-contrast reflection modulation at normal incidence in asymmetric multiple quantum well Fabry-Perot structure.Electron Lett,1989,25(9):566 |
[4] | Efron U.Spatial light modulators for optical computing.Proc SPIE,1986,700:132 |
[5] | Gilbreath G,Rabinovich W,Meehan T,et al.Large-aperture multiple quantum well modulating retroreflector for free-space optical data transfer on unmanned aerial vehicles.Opt Eng,2001,40:1348 |
[6] | Kang K,Powell J S,Stack R D,et al.Optical image correlation using high-speed multiple quantum well spatial light modulators.Proc IEEE,1999,3715:97 |
[7] | Ahearn J,Weiler M,Adams S,et al.Multiple quantum well (MQW) spatial light modulators (SLMs) for optical data processing and beam steering.SPIE Conference,2001:43 |
[8] | Wang Q,Junique S,Agren D,et al.Arrays of vertical-cavity electroabsorption modulators for parallel signal processing.Opt Express,2005,13(9):3323 |
[9] | Chen Hongda,Chen Zhibian,Du Yun,et al.Exeiton absorption and modulating characters in multiple quantum well switches.Journal of Optoelectronics-Laser,2000,11(2):143 (in Chinese) |
[10] | Wu R H,Chen Z B,Chen H D,et al.8×8 multiple quantum well spatial light modulators for optical interconnection.Chinese Journal of Lasers,1998,25(7):603 (in Chinese) |
[11] | Yah R H,Simes R J,Coldren L A.Surface-normal electroabsorption reflection modulators using asymmetric Fabry-Perot structures.IEEE J Quantum Electron,1991,27(7):1922 |
[12] | Stevens P J,Whitehead M,Parry G,et al.Computer modeling of the electric field dependent absorption spectrum of multiple quantum well material.IEEE J Quantum Electron,1988,24(10):2007 |
[13] | Nakamura K,Shimizu A,Fujii K,et al.Numerical analysis of the absorption and the refractive indexchange in arbitrary semiconductor quantum-well structures.IEEE J Quantum Electron,1992,28(7):1670 |
[14] | Zouganeli P,Parry G.Evaluation of the tolerance of asymmetric Fabry-Perot modulators with respect to realistic operating conditions.IEEE J Quantum Electron,1995,31(6):1140 |
[15] | Arad U,Redmard E,Shamay M,et al.Development of a large high-performance 2-D array of GaAs-AIGaAs multiple quantum-well modulators.IEEE Photonics Technol Lett,2003,15(11):1531 |
[16] | Bather K,Pezeshki B,Lord S M,et al.Molecular beam epitaxy growth of vertical cavity optical devices with in situ corrections.Appl Phys Lett,1992,61(12):1387 |
[17] | Wu Ronghan,Chen Zhibian,Chen Hongda,et al.Mode adjustment in multiple quantum well asymmetric Fabry-Perot modulator.Chinese Journal of Semiconductors,1998,19(5):341 (in Chinese) |
[18] | Trezza J A,Harris J J S.Creation and optimization of vertical cavity phase flip modulators.J Appl Phys,1994,75(10):4878 |
[19] | Yeh P.Optical waves in layered media.New York:Wiley,1988 |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分:
-
10%
-
20%
-
30%
-
40%
-
50%