In order to increase collection efficiency and eliminate image lag,multi n-type implants were introduced into the process of a pinned-photodiode.For the purpose of improving the collection efficiency,multi n-type implants with different implant energies were proposed,which expanded the vertical collection region.To reduce the image lag,a horizontal gradient doping concentration eliminating the potential barrier was also formed by multi n-type implants.The simulation result shows that the collection efficiency can be improved by about 10％ in the long wavelength range and the density of the residual charge is reduced from 2.59 × 109 to 2.62 × 107 cm-3.
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