We report the latest results of the 3C-SiC layer growth on Si (100) substrates by employing a novel home-made horizontal hot wall low pressure chemical vapour deposition (HWLPCVD) system with a rotating susceptor that was designed to support up to three 50 mm-diameter wafers. 3C-SiC film properties of the intrawafer and the wafer-to-wafer, including crystalline morphologies and electronics, are characterized systematically.Intra-wafer layer thickness and sheet resistance uniformity (σ/mean) of～3.40% and ～5.37% have been achieved in the 3 × 50 mm configuration. Within a run, the deviations of wafer-to-wafer thickness and sheet resistance are less than 4% and 4.24%, respectively.
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