A high power density monolithic power amplifier operated at Ku band is presented utilizing a 0.3 μm AlGaN/GaN HEMT production process on a 2-inch diameter semi-insulating (SI) 4H-SiC substrate by MOCVD.Over the 12-14 GHz frequency range,the single chip amplifier demonstrates a maximum power of 38 dBm (6.3 W),a peak power added efficiency (PAE) of 24.2％ and linear gain of 6.4 to 7.5 dB under a 10％ duty pulse conditionwhen operated at Vds =25 V and Vgs =-4 V.At these power levels,the amplifier exhibits a power density in excess of 5 W/mm.
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