We report a high power Ku band internally matched power amplifier (IMPA) with high power added efficiency (PAE) using 0.3 μm AlGaN/GaN high electron mobility transistors (HEMTs) on 6H-SiC substrate.The internal matching circuit is designed to achieve high power output for the developed devices with a gate width of 4 mm.To improve the bandwidth of the amplifier,a T type pre-matching network is used at the input and output circuits,respectively.After optimization by a three-dimensional electromagnetic (3D-EM) simulator,the amplifier demonstrates a maximum output power of 42.5 dBm (17.8 W),PAE of 30％ to 36.4％ and linear gain of 7 to 9.3 dB over 13.8-14.3 GHz under a 10％ duty cycle pulse condition when operated at Vds =30 V and Vgs =-4 V.At such a power level and PAE,the amplifier exhibits a power density of 4.45 W/mm.
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