半导体学报（英文版）, 2012, 33(10): 10-15. doi: 10.1088/1674-4926/33/10/102003

Zhang Xu ^1, , Rao Feng ^2, , Liu Bo ^3, , Peng Cheng ^4, , Zhou Xilin ^5, , Yao Dongning ^6, , Guo Xiaohui ^7, , Song Sannian ^8, , Wang Liangyong ^9, , Cheng Yan ^10, , Wu Liangcai ^11, , Song Zhitang ^12, , Feng Songlin ^13,

1.State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China ;Graduate University of the Chinese Academy of Sciences, Beijing 100049, China

2.State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China

3.State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China

4.State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China

5.State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China ;Graduate University of the Chinese Academy of Sciences, Beijing 100049, China

6.State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China

7.State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China

8.State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China

9.State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China

10.State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China

11.State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China

12.State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China

13.State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China

基金项目: the Science and Technology Council of Shanghai,China(1052nm07000) National Key Basic Research Program of China(2010CB934300;2011CBA00607;2011CB932800) the National Natural Science Foundation of China(60906004;60906003;61006087;61076121) the National Integrated Circuit Research Program of China(2009ZX02023-003)

Dry etching of new phase-change material Al1.3Sb3Te in CF4/Ar plasma

Keywords： Al1.3Sb3Te

The dry etching characteristic of Al1.3Sb3Te film was investigated by using a CF4/Ar gas mixture.The experimental control parameters were gas flow rate into the chamber,CF4/Ar ratio,the O2 addition,the chamber background pressure,and the incident RF power applied to the lower electrode.The total flow rate was 50 sccm and the behavior of etch rate of Al1.3Sb3Te thin films was investigated as a function of the CF4/Ar ratio,the O2 addition,the chamber background pressure,and the incident RF power.Then the parameters were optimized.The fast etch rate was up to 70.8 nm/min and a smooth surface was achieved using optimized etching parameters of CF4 concentration of 4％,power of 300 W and pressure of 80 mTorr.

参考文献

[1]	Peng C,Song Z,Rap F.Al1.3Sb3Te material for phase change memory application.Appl Phys Lett,2011,99:043105
[2]	Feng G,Liu B,Song Z.Reactive ion etching of Ge2Sb2Te5 in CHF3/O2 plasma for nonvolatile phase-change memory device.Electrochem Solid-State Lett,2007,10(5):D47
[3]	Washington J S,Joseph E A,Raoux S.Characterizing the effects of etch-induced material modification on the crystallization properties of nitrogen doped Ge2Sb2Te5.J Appl Phys,2011,109:034502
[4]	Kang S K,Jeon M H,Park J Y,et al.Etch damage of Ge2Sb2Te5 for different halogen gases.Jpn J Appl Phys,2011,50:086501
[5]	Engelmark F.AIN and high-k thin films for IC and electroacoustic applications.Uppsala:Uppsala University,2002
[6]	Chen D,Xu D,Wang J,et al.Dry etching of AlN films using the plasma generated by fluoride.Vacuum,2009,83:282
[7]	Saito S,Sugita K,Tonotani J.Effect of CHF3 addition on reactive ion etching of aluminum using inductively coupled plasma.Jpn J Appl Phys,2005,44:2971
[8]	Wang J S,Chend Y Y,Lakin K M.Reactive ion etching of piezoelectric films for acoustic wave devices.Ultrasonics Symposium Proceedings,San Diego,USA,1982:346
[9]	Plank N O V,Cheung R.Functionalization of carbon nanotubes for molecular electronics.Microelectron Eng,2004,73/74:578
[10]	Feng G,Liu B,Song Z.Reactive-ion etching of Ge2Sb2Te5 in CF4/Ar plasma for non-volatile phase-change memories.Microelectron Eng,2008,85:1699
[11]	Kim J W,Kim Y C,Lee Y C.Reactive ion etching mechanism of plasma enhanced chemically vapor deposited aluminum oxide film in CF4/O2 plasma.J Appl Phys,1995,78(3):2045
[12]	Chinoy P B.Reactive Ion etching of Benzocyclobutene polymer films.IEEE Trans Compon,Packag Manuf Technol,Part C,1997,20(3):199
[13]	Lee J M,Chang K M,Lee I H,et al.Highly selective dry etching of Ⅲ nitrides using an inductively coupled Cl2/Ar/O2 plasma.J Vac Sci Technol B,2000,18(3):1409

上一张下一张

计量

下载量()
访问量()

作者相关

在本站搜索
Zhang Xu Rao Feng Liu Bo Peng Cheng Zhou Xilin Yao Dongning Guo Xiaohui Song Sannian Wang Liangyong Cheng Yan Wu Liangcai Song Zhitang Feng Songlin
在百度学术搜索
Zhang Xu Rao Feng Liu Bo Peng Cheng Zhou Xilin Yao Dongning Guo Xiaohui Song Sannian Wang Liangyong Cheng Yan Wu Liangcai Song Zhitang Feng Songlin
在万方数据库搜索
Zhang Xu Rao Feng Liu Bo Peng Cheng Zhou Xilin Yao Dongning Guo Xiaohui Song Sannian Wang Liangyong Cheng Yan Wu Liangcai Song Zhitang Feng Songlin
在CNKI搜索
Zhang Xu Rao Feng Liu Bo Peng Cheng Zhou Xilin Yao Dongning Guo Xiaohui Song Sannian Wang Liangyong Cheng Yan Wu Liangcai Song Zhitang Feng Songlin

文章评分

您的评分：
1

0%
2

0%
3

0%
4

0%
5

0%

材料期刊网

Dry etching of new phase-change material Al1.3Sb3Te in CF4/Ar plasma

参考文献