Insertion of a C-containing layer in a metal/Ge structure,using a chemical bath,enabled the Schottky barrier height (SBH) to be modulated.Chemical baths with I-octadecene,I-hexadecene,I-tetradecene,and I-dodecene were used separately with Ge substrates.An ultrathin C-containing layer stops the penetration of free electron wave functions from the metal to the Ge.Metal-induced gap states are alleviated and the pinned Fermi level is released.The SBH is lowered to 0.17 eV.This new formation method is much less complex than traditional ones,and the result is very good.
参考文献
| [1] | Caymax M,Eneman G,Bellenger F,et al.Germanium for advanced CMOS anno 2009:a SWOT analysis.Technology Digest of International Electron Devices Meet,2009:461 |
| [2] | Chui C,Gopalakrishnan K,Griffin P.Activation and diffusion studies of ion-implanted p and n dopants in germanium.Appl Phys Lett,2003,83:3275 |
| [3] | Chui C,Kulig L,Moran J,et al.Germanium n-type shallow junction activation dependences.Appl Phys Lett,2005,87:091909 |
| [4] | Dimoulas A,Tsipas P,Sotiropoulos A,et al.Fermi-level pinning and charge neutrality level in germanium.Appl Phys Lett,2006,89:252110 |
| [5] | Nishimura T,Kita K,Toriumi A.Evidence for strong Fermi-level pinning due to metal-induced gap states at metal/germanium interface.Appl Phys Lett,2007,91:123123 |
| [6] | Connelly D,Faulkner C,Grupp D,et al.A new route to zerobarrier metal source/drain MOSFETs.IEEE Trans Nanotechnol,2004,3(1):98 |
| [7] | Connelly D,Faulkner C,Clifton P,et al.Fermi-level depinning for low-barrier Schottky source/drain transistors.Appl Phys Lett,2006,88:012105 |
| [8] | Kobayashi M,Kinoshita A,Saraswat K,et al.Fermi level depinning in metal/Ge Schottkyjunction for metal source/drain Ge metal-oxide-semiconductor field-effect-transistor application.J Appl Phys,2009,105:023702 |
| [9] | Dimoulas A,Gusev E,Mclntyre P.Advanced gate stacks for high-mobility semiconductors.Berlin:Springer,2007 |
| [10] | Choi K,Buriak J.Hydrogermylation of alkenes and alkynes on hydride-terminated Ge(100) surfaces.Langmuir,2000,16:7737 |
| [11] | Lide D.CRC handbook of chemistry and physics.Florida:CRC Press,2010 |
| [12] | Chen R,Bent S F.Highly stable monolayer resists for atomic layer deposition on germanium and silicon.Chem Mater,2006,16:3733 |
| [13] | Briggs D,Seah M.Practical surface analysis by auger and X-ray photoelectron spectroscopy.2nd ed.New York:John Wiley & Sons,1990 |
| [14] | Haber J,Lewis N.Infrared and X-ray photoelectron spectro-scopic studies of the reactions of hydrogen-terminated crystalline Si (111) and Si (100) surfaces with Br2,I2,and ferrocenium in alcohol solvents.J Phys Chem B,2002,106:3639 |
| [15] | Knapp D,Brunschwig B,Lewis N.Chemical,electronic,and electrical properties of alkylated Ge (111) surfaces.J Phys Chem C,2010,114:12300 |
| [16] | Claeys C,Simoen E.Germanium-based technologies.Oxford:Elsevier Science,2007 |
| [17] | Faber E,de Smet L,Olthuis W,et al.Si-C linked organic monolayers on crystalline silicon surfaces as alternative gate insulators.Chem Phys Chem,2005,6:2153 |
| [18] | Salomon A,Boecking T,Seitz O,et al.What is the barrier for tunneling through alkyl monolayers? Results from n-and p-Si-Alkyl/Hg junctions.Adv Mater,2007,19:445 |
| [19] | Schroder D.Semiconductor material and device characterization.3rd ed.New York:John Wiley & Sons,2006 |
| [20] | Tang X,Zhang Y,Zhang Y,et al.Direct tunneling effect in SiC Schottky contacts.Chinese Journal of Semiconductors,2006,27:174 |
| [21] | Sze S,Ng K.Physics of semiconductor devices.3rd ed.New York:John Wiley & Sons,2007 |
| [22] | Sharp I,Schoell S,Hoeb M,et al.Electronic properties of self-assembled alkyl monolayers on Ge surfaces.Appl Phys Lett,2008,92:223306 |
| [23] | Liu Y,Yu H.Alkyl monolayer-passivated metal-semiconductor diodes:molecular tunability and electron transport.Chem Phys Chem,2002,3:799 |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%