半导体学报（英文版）, 2012, 33(10): 37-41. doi: 10.1088/1674-4926/33/10/104003

Luo Xiaorong ^1, , Hu Gangyi ^2, , Zhou Kun ^3, , Jiang Yongheng ^4, , Wang Pei ^5, , Wang Qi ^6, , Luo Yinchun ^7, , Zhang Bo ^8, , Li Zhaoji ^9,

1.Science and Technology on Analog Integrated Circuit Laboratory, Chongqing 400060, China ;State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 China

2.Science and Technology on Analog Integrated Circuit Laboratory, Chongqing 400060, China

3.State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 China

4.State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 China

5.State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 China

6.State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 China

7.State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 China

8.State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 China

9.State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 China

基金项目: the National Key Laboratory of Analogue Integrated Circuit,China(9140C090304110C0905) the National Natural Science Foundation of China(61176069;60976060)

High voltage SOI LDMOS with a compound buried layer

Keywords： SOI

An SOI LDMOS with a compound buried layer (CBL) was proposed.The CBL consists of an upper buried oxide layer (UBOX) with a Si window and two oxide steps,a polysilicon layer and a lower buried oxide layer (LBOX).In the blocking state,the electric field strengths in the UBOX and LBOX are increased from 88 V/μm of the buried oxide (BOX) in a conventional SOI (C-SOI) LDMOS to 163 V/μm and 460 V/μm by the holes located on the top interfaces of the UBOX and LBOX,respectively.Compared with the C-SOI LDMOS,the CBL LDMOS increases the breakdown voltage from 477 to 847 V,and lowers the maximal temperature by 6 K.

参考文献

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High voltage SOI LDMOS with a compound buried layer

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