Nanoimprint lithography (NIL) is widely used in the fabrication of nano-scale semiconductor devices for its advantages of high resolution,low cost,and high throughput.However,traditional hard stamp imprinting has some drawbacks such as short stamp lifetime,bad uniformity in big areas,and large particle influence.In this paper,a flexible intermediate polymer stamp (IPS) is proposed to solve the drawbacks mentioned above.Meanwhile,we use a method of temperature-pressure variation imprinting to improve the resist liquidity in the process of imprinting,and eventually we achieve high quality patterns.This method combined with IPS has been used to fabricate a high quality grating whose half pitch is 50 nm.
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