半导体学报（英文版）, 2012, 33(10): 142-148. doi: 10.1088/1674-4926/33/10/106003

Su Jianxiu ^1, , Du Jiaxi ^2, , Ma Lijie ^3, , Zhang Zhuqing ^4, , Kang Renke ^5,

1.Henan Institute of Science and Technology, Xinxiang 453003, China

2.Henan Institute of Science and Technology, Xinxiang 453003, China

3.Henan Institute of Science and Technology, Xinxiang 453003, China

4.Henan University of Technology, Zhengzhou 450001, China

5.Key Laboratory for Precision and Non-Traditional Machining Technology of Ministry of Education, Dalian University of Technology, Dalian 116024, China

基金项目: the Science and Technology Innovation Program of Henan Institute of Science and Technology the Key Scientific Research Program of Economic and Social Development of Xinxiang City(S10004) the National Natural Science Foundation of China(51075125)

Material removal rate of 6H-SiC crystal substrate CMP using an alumina (Al2O3)abrasive

Keywords： SiC crystal substrate

The influences of the polishing slurry composition,such as the pH value,the abrasive size and its concentration,the dispersant and the oxidants,the rotational velocity of the polishing platen and the carrier and the polishing pressure,on the material removal rate of SiC crystal substrate (0001) Si and a (0001) C surface have been studied based on the alumina abrasive in chemical mechanical polishing (CMP).The results proposed by our research here will provide a reference for developing the slurry,optimizing the process parameters,and investigating the material removal mechanism in the CMP of SiC crystal substrate.

参考文献

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[10]	http://www.jyeoo.com/chemistry/ques/detail/2af30518-48d3-48 f8-99b0-fl bc 14cf80b7

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Material removal rate of 6H-SiC crystal substrate CMP using an alumina (Al2O3)abrasive

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