Sn/Cu/ZnS precursor were deposited by evaporation on soda lime glass at room temperature,and then polycrystalline thin films of Cu2ZnSnS4 (CZTS) were produced by sulfurizing the precursors in a sulfur atmosphere at a temperature of 550 ℃ for 3 h.Fabricated CZTS thin films were characterized by X-ray diffraction,energy dispersive X-ray spectroscopy,ultraviolet-visible-near infrared spectrophotometry,the Hall effect system,and 3D optical microscopy.The experimental results show that,when the ratios of [Cu]/([Zn] + [Sn]) and [Zn]/[Sn] in the CZTS are 0.83 and 1.15,the CZTS thin films possess an absorption coefficient of larger than 4.0 × 104 cm-1 in the energy range 1.5-3.5 eV,and a direct band gap of about 1.47 eV.The carrier concentration,resistivity and mobility of the CZTS film are 6.98 × 1016 cm-3,6.96 Ω.cm,and 12.9 cm2/(V.s),respectively and the conduction type is p-type.Therefore,the CZTS thin films are suitable for absorption layers of solar cells.
参考文献
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