The anode injection efficiency reduction of 3.3-kV-class non-punch-through insulated-gate bipolar transistors (NPT-IGBTs) due to backside processes is experimentally studied through comparing the forward blocking capabilities of the experiments and the theoretical breakdown model in this paper.Wafer lifetimes are measured by a μ-PCD method,and well designed NPT-IGBTs with a final wafer thickness of 500/μm are fabricated.The test results show higher breakdown voltages than the theoretical breakdown model in which anode injection efficiency reduction is not considered.This indicates that auode injection efficiency reduction must be considered in the breakdown model.Furthermore,the parameters related to anode injection efficiency reduction are estimated according to the experimental data.
参考文献
| [1] | Baliga B J.The future of power semiconductor device technology.Proc IEEE,2001,89(6):822 |
| [2] | Castellazzi A,Ciappa M,Fichtner W,et al.Integrated compact modelling of a planar-gate non-punch-through 3.3 kV-1200 A IGBT module for insightful analysis and realistic interpretation of the failure mechanisms.Proc ISPSD,2007:133 |
| [3] | Bauer J G,Schilling O,Schaeffer C,et al.Investigations on the ruggedness limit of 6.5 kV IGBT.Proc ISPSD,2005:1 |
| [4] | Bauer J G,Duetemeyer T,Falck E,et al.Investigations in 6.5 kV trench IGBT and adapted EmCon diode.Proc ISPSD,2007:5 |
| [5] | Uzuka T.Trends in high-speed railways and the implications on power electronics and power devices.Proc ISPSD,2011:6 |
| [6] | Sato K,Yoshizawa M,Fukushima T.Traction systems using power electronics for Shinkansen high-speed electric multiple units.The International Power Electronics Conference,2010:2859 |
| [7] | Khanna V K.Insulated gate bipolar transistor (IGBT):theory and design.John Wiley & Sons,2003 |
| [8] | Sze S M,Ng K K.Physics of semiconductor devices.3rd ed.John Wiley & Sons,2007 |
| [9] | Taur Y,Ning T H.Fundamentals of modem VLSI devices.Cambridge University Press,1998 |
| [10] | Baliga B J.Fundamentals of power semiconductor devices.Springer,2008 |
| [11] | Chen X B,Zhang Q Z.Transistor theory and design.Beijing:Publishing House of Electronics Industry,2006 |
| [12] | Nakamura K,Hisamoto Y,Matsumura T,et al.The second stage of a thin wafer IGBT low loss 1200 V LPT-CSTBTTM with a backside doping optimization process.Proc ISPSD,2006:1 |
| [13] | Robinson J T,Cecil O B,Shah R R.Method for removal of minute physical damage to silicon wafers by employing laser annealing.USA Patent,No.4390392,1983 |
| [14] | Jiang Huaping,Chen Wanjun,Liu Chuang,et al.Design and optimization of linearly graded-doping junction termination extension for 3.3-kV-class IGBTs.Journal of Semiconductors,2011,32(12):124004 |
- 下载量()
- 访问量()
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%