Isolated extended drain NMOS (EDNMOS) transistors are widely used in power signal processing.The hole current induced by a high electric field can result in a serious reliability problem due to a parasitic NPN effect.By optimizing p-type epitaxial (p-epi) thickness,n-type buried layer (BLN) and nwell doping distribution,the peak electric field is decreased by 30％ and the peak hole current is decreased by 60％,which obviously suppress the parasitic NPN effect.Measured I-V characteristics and transmission line pulsing (TLP) results show that the onstate breakdown voltage is increased from 28 to 37 V when 6 V Vgs is applied and the energy capability is improved by about 30％,while the on-state resistance remains unchanged.
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