参考文献
| [1] | Chen Y K,Wu M C,Hobson W S,et al.High-power 980 nm A1GaAs/InGaAs strained quantum-well laser grown by OMVPE.Photonics Technol Lett,1991,3(5):406 |
| [2] | Lee J W,Devre M W,Reelfs B H,et al.Advanced selective dry etching of GaAs/A1GaAs in high density inductively coupled plasmas.J Vac SciTechnol A,2000,18(4):1220 |
| [3] | Li Hui,Qu Yi,Gao Xin,et al.High performance 980 nm single mode semiconductor lasers.Acta Armamentarii,2010,31 (8):1110 |
| [4] | Zhu Xiaopeng,Xu Zuntu,Zhang Jingming,et al.A single mode 980 nm InGaAs/GaAs/AlGaAs large optical cavity quantum well laser with low vertical divergence angle.Journal of Semiconductors,2002,23(4):342 |
| [5] | Xu Zuntu,Yang Guowen,Zhang Jingming,et al.High efficiency Al-free 980 nm InGaAs/InGaAsP/InGaP strained quantum well lasers.Journal of Semiconductors,2000,21 (5):417 |
| [6] | Yang Guowen,Xu Junying,Xu Zuntu,et al.980 nm quantum well laser pumping sources for Er-doped fiber amplifier.Journal of Semiconductors,1996,17(12):940 |
| [7] | Cao Sansong.Single-mode ridge-waveguide AlGaAs/GaAs quantum well lasers.Laser Technology,1996,20(3):177 |
| [8] | Hocker G B,Bums W K.Mode dispersion in diffused channel waveguides by the effective index method.Appl Opt,1977,16(1):113 |
| [9] | Major J S,Plano W E,Welch D F,et al.Single-mode InGaAs-GaAs laser diodes operating at 980 nm.Electron Lett,1991,27(6):539 |
| [10] | Hobson W S,Chen Y K,Wu M C.InGaAs/AlGaAs ridge wave-guide lasers utilizing an InGaP etch-stop layer.Semicond Sci Technol,1992,7:1425 |
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