参考文献
| [1] | Wu J,Walukiewicz W,Yu K M,et al.Unusual properties of the fundamental band gap of InN.Appl Phys Lett,2002,80(21):3967 |
| [2] | Xiao H,Wang X,Wang J,et al.Growth and characterization of InN on sapphire substrate by RF-MBE.J Cryst Growth,2005,276(3/4):401 |
| [3] | Muth J F,Lee J H,Shmagin I K,et al.Absorption coefficient,energy gap,exciton binding energy,and recombination lifetime of GaN obtained from transmission measurements.Appl Phys Lett,1997,71(18):2572 |
| [4] | Wu J,Walukiewicz W,Yu K M,et al.Superior radiation resistance of In1-xGaxN alloys:full-solar-spectrum photovoltaic material system.J Appl Phys,2003,94(10):6477 |
| [5] | Jani O,Ferguson I,Honsberg C,et al.Design and characterization of GaN/InGaN solar cells.Appl Phys Lett,2007,91(13):132117 |
| [6] | Zhang Xiaobin,Wang Xiaoliang,Xiao Hongling,et al.InGaN/GaN multiple quantum well solar cells with an enhanced open-circuit voltage.Chin Phys B,2011,20(2):028402 |
| [7] | Jampana B R,Melton A G,Jamil M,et al.Design and realization of wide-band-gap (～2.67 eV) InGaN p-n junction solar cell.IEEE Electron Device Lett,2010,31(1):32 |
| [8] | Dahal R,Li J,Aryal K,et al.InGaN/GaN multiple quantum well concentrator solar cells.Appl Phys Lett,2010,97(7):073115 |
| [9] | Elsner J,Jones R,Sitch P K,et al.Theory of threading edge and screw dislocations in GaN.Phys Rev Lett,1997,79(19):3672 |
| [10] | Sakai S.Homoepitaxial and heteroepitaxial growth of InGaN/GaN.Electrons and Communications in Japan (Part Ⅱ Electronics),2000,83(2):17 |
| [11] | Holec D,Costa P M F J,Kappers M J,et al.Critical thickness calculations for InGaN/GaN.J Cryst Growth,2007,303(1):314 |
| [12] | Sheu J K,Yang C C,Tu S J,et al.Demonstration of GaN-based solar cells with GaN/InGaN superlattice absorption layers.IEEE Electron Device Lett,2009,30(3):225 |
| [13] | Sakai A,Sunakawa H,Usui A.Defect structure in selectively grown GaN films with low threading dislocation density.Appl Phys Lett,1997,71(16):2259 |
| [14] | Kapolnek D,Keller S,Vetury R,et al.Anisotropic epitaxial lateral growth in GaN selective area epitaxy.Appl Phys Lett,1997,71:1204 |
| [15] | Lee K S,Kwack H S,Hwang J S,et al.Spatial correlation between optical properties and defect formation in GaN thin films laterally overgrown on cone-shaped pattemed sapphire substrates.J Appl Phys,2010,107(10):103506 |
| [16] | Yang C C,Sheu J K,Kuo C H,et al.Improved power conversion efficiency of InGaN Photovoltaic devices grown on patterned sapphire substrates.IEEE Electron Device Lett,2011,32(4):536 |
| [17] | Lee Y J,Lee M H,Cheng C M,et al.Enhanced conversion efficiency of InGaN multiple quantum well solar cells grown on a pattemed sapphire substrate.Appl Phys Lett,2011,98(26):263504 |
| [18] | Srikant V,Speck J S,Clarke D R.Mosaic structure in epitaxial thin films having large lattice mismatch.J Appl Phys,1997,82(9):4286 |
| [19] | Chu M T,Liao W Y,Homg R H,et al.Growth and characterization ofp-InGaN/i-InGaN/n-GaN double-heterojunction solar cells on patterned sapphire substrates.IEEE Electron Device Lett,2011,32(7):922 |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%