参考文献
| [1] | Fayolle M,Romagna F.Copper CMP evaluation:planarization issues.Microelectron Eng,1997,37/38:135 |
| [2] | Pandija S,Roy D,Babu S V.Chemical mechanical planarization of copper using abrasive-free solutions of oxalic acid and hydrogen peroxide.Mater Chem Phys,2007,102:141 |
| [3] | Price D T,Gutmann R J,Murarka S P.Damascene copper interconnects with polymer ILDs.Thin Solid Films,1997,308/309:523 |
| [4] | Kriz J,Angelkort C,Czekalla M,et al.Overview of dual damascene integration schemes in Cu BEOL integration.Microelectron Eng,2008,85:2128 |
| [5] | Ruan W B,Chen L,Li Z G,et al.Effects of pattern characteristics on copper CMP.Journal of Semiconductors,2009,30:046001 |
| [6] | Nguyen V H,Daamen R,Hoofman R.Impact of different slurry and polishing pad choices on the planarization efficiency of a copper CMP process.Microelectron Eng,2004,76:95 |
| [7] | Su J X,Du J X,Ma L J,et al.Material removal rate of 6H-SiC crystal substrate CMP using an alumina (A12O3) abrasive.Journal of Semiconductors,2012,33:106003 |
| [8] | Zeidler D,Pl(o)tner M,Drescher K.Endpoint detection method for CMP of copper.Microelectron Eng,2000,50:411 |
| [9] | Nguyen V,VanKranenburg H,Woerlee P.Dependency of dishing on polish time and slurry chemistry in Cu CMP.Microelectron Eng,2000,50:403 |
| [10] | Noh K,Saka N,Chun J H.Effect of slurry selectivity on dielectric erosion and copper dishing in copper chemical-mechanical polishing.Cirp Ann-Manuf Tech,2004,53:463 |
| [11] | Lee H,Park B,Jeong H.Mechanical effect of process condition and abrasive concentration on material removal rate profile in copper chemical mechanical planarization.J Mater Process Technol,2009,209:1729 |
| [12] | Pandija S,Roy D,Babu S V.Achievement of high planarization efficiency in CMP of copper at a reduced down pressure.Microelectron Eng,2009,86:367 |
| [13] | Wang C W,Liu Y L,Niu X H,et al.An advanced alkaline slurry for barrier chemical mechanical planarization on pattemed wafers.Journal of Semiconductors,2012,33:046001 |
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