参考文献
| [1] | Ali G M,Singh S,Chakrabarti P.Ultraviolet ZnO photodetectors with high gain.J Electron Sci Technol,2010,8(1):55 |
| [2] | Periasamy C,Chakrabarti P.Electrical and optical characterization of ZnO based nano and large area Schottky contacts.Curr Appl Phys,2011,11(4):959 |
| [3] | Chirakkara S,Krupanidhi S B.Study of n-ZnO/p-Si (100) thin film heterojunctions by pulsed laser deposition without buffer layer.Thin Solid Films,2012,520(18):5894 |
| [4] | Vaezi M R,Sadmezhaad S K.Effects of substrate material and annealing temperature on morphology of zinc oxide films.Mater Sci Technol,2006,22(3):308 |
| [5] | Ding J N,Liu Y B,Tan C B,et al.Investigations into the impact of various substrates and ZnO ultra thin seed layers prepared by atomic layer deposition on growth of ZnO nanowire array.Nanoscale Res Lett,2012,7(1):368 |
| [6] | Minami T,Miyata T,lhara K,et al.Effect of ZnO film deposition methods on the photovoltaic properties of ZnO-Cu2O heterojunction devices.Thin Solid Films,2006,494(1/2):47 |
| [7] | Polsongkram D,Chamninok P,Pukird S,et al.Effect of synthesis conditions on the growth of ZnO nanorods via hydrothermal method.Physica B,2008,403(19/20):3713 |
| [8] | Um H D,Moiz S A,Park K T,et al.Highly selective spectral response with enhanced responsivity of n-ZnO/p-Si radial heterojunction nanowire photodiode.Appl Phys Lett,2011,98(3):033102 |
| [9] | Kale V S,Prabhakar R R,Pramana S S,et al.Enhanced electron field emission properties of high aspect ratio silicon nanowirezinc oxide core-shell arrays.Phys Chem Chem Phys,2012,14(13):4614 |
| [10] | Kang H,Park J,Choi T,et al.n-ZnO∶N/p-Si nanowire photodiode prepared by atomic layer deposition.Appl Phys Lett,2012,100(4):041117 |
| [11] | Sun L,He H,Liu C,et al.Controllable growth and optical properties ofZnO nanostructures on Si nanowire arrays.Cryst Engg Comm,2011,13(7):2439 |
| [12] | Sun K,Jing Y,Park N,et al.Solution synthesis of large-scale,high-sensitivity ZnO/Si hierarchical nanoheterostructure photodetectors.J Am Chem Soc,2010,132(44):15465 |
| [13] | Choi J H,Das S N,Moon K J,et al.Fabrication and characterization of p-Si nanowires/ZnO film heterojunction diode.SolidState Electron,2010,54(i 2):1582 |
| [14] | Zhou H,Fang G,Yuan L,et al.Deep ultraviolet and near infrared photodiode based on n-ZnO/p-silicon nanowire heterojunction fabricated at low temperature.Appl Phys Lett,2009,94(1):013503 |
| [15] | Hu J,Chen Z,Sun Y,et al.ZnO-Si side-to-side biaxial nanowire heterostructures with improved luminescence.J Mater Chem,2009,19(38):7011 |
| [16] | Kim K,Moona T,Lee M,et al.Light-emitting diodes composed ofn-ZnO and p-Si nanowires constructed on plastic substrates by dielectrophoresis.Solid State Sci,2011,13(9):1735 |
| [17] | Hazra P,Jit S.An In-house approach for fabrication of silicon nanowire arrays using electroless metal deposition and etching method.Int J Surf Sci Eng,2013,7(3):285 |
| [18] | Chen Y,Pu Y,Wang L,et al.Influence of nitrogen annealing on structural and photoluminescent properties of ZnO thin film grown on c-A12O3 by atmospheric pressure MOCVD.Mat Sci Semicond Proc,2005,8(4):491 |
| [19] | Yakuphanoglu F.The current-voltage characteristics of FSS/nSi heterojunction diode under dark and illumination.Physica B,2007,388(1/2):226 |
| [20] | Seo O,Kim H,Jo J.Anomalous capacitance change in lowtemperature grown ZnO thin-film transistors.Eur Phys J Appl Phys,2010,52(1):10501 |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%