半导体学报（英文版）, 2014, 35(1): 146-150. doi: 10.1088/1674-4926/35/1/016001

基金项目: the National Natural Science Foundation of Hebei Province(E2013202247) the Fund Project of Hebei Provincial Department of Education(2011128) the Major National Science and Technology Special Projects(2009ZX02308)

Application of a macromolecular chelating agent in chemical mechanical polishing of copper film under the condition of low pressure and low abrasive concentration

Keywords： FA/O chelating agent

参考文献

[1]	Pandija S,Roy D,Babu S V.Achievement of high planarizationefficiency in CMP of copper at a reduced down pressure.Micro-electron Eng,2009,86:367
[2]	Zhang W,Lu X,Liu Y,et al.Inhibitors for organic phosphonicacid system abrasive free polishing of Cu.Appl Surf Sci,2009,255:4114
[3]	Murata J,Sadakuni S,Okamoto T.Structural and chemicalcharacteristics of atomically smooth GaN surfaces prepared byabrasive-free polishing with Pt catalyst.J Cryst Growth,2012,349:83
[4]	Ng D,Kulkarni M,Johnson J.Oxidation and removal mechanisms during chemical-mechanical planarization.Wear,2007,263:1477
[5]	Oh S,Seok J.An integrated material removal model for silicon dioxide layers in chemical mechanical polishing processes.Wear,2009,266(7/8):839
[6]	Zheng J P,Roy D.Electrochemical examination of surface films formed during chemical mechanical planarization of copper in acetic acid and dodecyl sulfate solutions.Thin Solid Films,2009,517(16):4587
[7]	Shattuck K G,Lin J Y,Cojocaru P.Characterization of phosphate electrolytes for use in Cu electrochemical mechanical planarization.Electrochemical Acta,2008,53:8211
[8]	Yang J C,Oh D W,Lee G W,et al.Step height removal mechanism of chemical mechanical planarization (CMP) for sub-nanosurface finish.Wear,2010,268(3/4):505

上一张下一张

上一张下一张

计量

下载量()
访问量()

作者相关

在本站搜索
在百度学术搜索
在万方数据库搜索
在CNKI搜索

文章评分

您的评分：
1

0%
2

0%
3

0%
4

0%
5

0%