参考文献
| [1] | Akinlami J O,Ashamu A O.Optical properties ofGaAs.Journal of Semiconductors,2013,34(3):032002 |
| [2] | Zhang Ying,Wang Zhigong,Xu Jian,et al.Design of a low noise distributed amplifier with adjustable gain control in 0.15 μm GaAs PHEMT.Journal of Semiconductors,2013,33(3):035003 |
| [3] | Parida R K,Agrawala N C,Dash G N,et al.Characteristics of a GaN-based Gunn diode for THz signal generation.Journal of Semiconductors,2013,33(8):084001 |
| [4] | Ma Xiangrong,Shi Wei,Ji Weili,et al.Light controlled prebreakdown characteristics of a semi-insulating GaAs photoconductive switch.Journal of Semiconductors,2013,32(12):124006 |
| [5] | Lü Siyu,Qu Xiaosheng.A1GaAs/GaAs tunnel junctions in a 4-J tandem solar cell.Journal of Semiconductors,2011,32(11):112003 |
| [6] | Kunihiro K,Ohno Y.Design consideration for buried p layers to suppress substrate-trapping effects in GaAs MESFETs.SolidState Electron,2001,45(8):1763 |
| [7] | Markov A V,Biberin V I,Polyakov A Y,et al.Synthesis solute diffusion growth of bulk GaAs:effects of growth temperature and stoichiometry.Solid-State Electron,2007,51 (5):1039 |
| [8] | Wakejima A,Ota K,Matsunaga K.Study of surface-trap-induced gate depletion region of field-modulating plate GaAs-FETs.Solid-State Electron,2006,50(2):372 |
| [9] | Qi H,Wang Q,Zhang X,et al.Theoretical and experimental study of laser induced damage on GaAs by nanosecond pulsed irradiation.Opt Lasers Eng,2011,49(2):285 |
| [10] | Kajara T T,Gaeta A L.Q switching of a diode-pumped Nd:YAG laser with GaAs.Opt Lett,1996,21(16):1244 |
| [11] | Parida R K,Agrawala N C,Dash G N,et al.Characteristics of a GaN-based Gunn diode for THz signal generation.Journal of Semiconductors,2012,33(8):084001 |
| [12] | Sengouga N,Jones B K.Backgating effects in GaAs FETs with a channel-semi-insulating substrate boundary.Solid-State Electron,1995,38(7):1413 |
| [13] | Sengouga N,Abdeslam N A.Dependence of backgating on the type of deep centres in the substrate of GaAs FETs.Solid-State Electron,2008,52(5):1039 |
| [14] | Dehimi L,Sengouga N,Jones B K.Modelling of semiconductor diodes made of high defect concentration,irradiated,high resistivity and semi-insulating material:the current-voltage characteristics.Nuclear Instruments and Methods in Physics Research A,2004,519(3):532 |
| [15] | Kunihiro K,Ohno Y.design considerations for buried p-layers to suppress substrate-trapping effects in GaAs MESFETs.SolidState Electron,2001,45(8):1763 |
| [16] | Khuchua N P,Khvedelidze L V,Gorev N B,et al.determination of deep trap concentration at channel-substrate interface in GaAs MESFET using sidegating measurements.Solid-State Electron,2002,46(7):1463 |
| [17] | Jin G,Jones B K.Characterisation of the time-dependent properties of GaAs FETs.Semicond Sci Technol,1990,5(2):395 |
| [18] | Fukui H.Optimal noise figure of microwave GaAs MESFETs.IEEE Trans Electron Devices,1979,ED-26(7):1032 |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%