参考文献
| [1] | Tonouchi M.Cutting-edge terahertz technology.Nature Photonic,2007,1(2):97 |
| [2] | Jansen C,Wietzke S,Scheller M,et al.Applications for THz systems:approaching markets and perspectives for an innovative technology.Optik & Photonik,Wiley-VCH Verlag,2008,4:26 |
| [3] | Siegel P H.Terahertz technology.IEEE Trans Microw Theory Tech,2002,50(3):910 |
| [4] | Siegel P H.Terahertz technology in biology and medicine.IEEE Trans Microw Theory Tech,2004,52(10):2438 |
| [5] | Mueller E R.Terahertz radiation:applications and sources.The Industrial Physicist,2003,9:27 |
| [6] | Farman J C,Gardiner B G,Shanklin J D.Large losses of total ozone in Antarctica reveal seasonal C1Ox/NOx interaction.Nature,1985,315:207 |
| [7] | Santee M L,Manney G L,Livesey N J,et al.Polar processing and development of the 2004 Antarctic ozone hole:first results from MLS on Aura.Geophys Res Lett,2005,32(12):L12817 |
| [8] | Bi X,East J R,Ravaioli U,et al.Analysis and design of Si terahertz transit-time diodes.Proceedings of 16th International Symposium on Space Terahertz Technology (ISSTT),Chalmers,Sweden,2005:271 |
| [9] | Pradhan J,Swain S K,Pattanaik S R,et al.Competence of 4H-SiC IMPATT diode for terahertz application.Asian Journal of Physics,2012,21(2):175 |
| [10] | Buniatyan V V,Aroutiounian V M.Wide gap semiconductor microwave devices.J Phys D:Appl Phys,2007,40(20):6355 |
| [11] | Acharya A,Banerjee J P.Prospects of IMPATT devices based on wide bandgap semiconductors as potential terahertz sources.Appl Nanosci,2012,DOI:10.1007/s13204-012-0172-y |
| [12] | Trew R J,Yan J B,Mock P M.The potential of diamond and SiC electronic devices for microwave and millimeter-wave power applications.Proc IEEE,1991,79:598 |
| [13] | Davis R F,Khelner G,Shur M,et al.Thin film deposition and microelectronic and optoelectronic device fabrication and characterization in monocrystalline alpha and beta silicon carbide.Proc IEEE,1991,79:677 |
| [14] | Pattanaik S R,Dash G N,Mishra J K.Prospects of 6H-SiC for operation as an IMPATT diode at 140 GHz.Semicond Sci Technol,2005,20(3):299 |
| [15] | Dash G N,Pati S P.Computer analysis of negative resistance profiles in silicon double drift diodes including the carrier diffusion effect.Phys Status Solidi A,1991,127:577 |
| [16] | Raghunathan R,Baliga B J.Temperature dependence of hole impact onizationcoefficients in 4H and 6H-SiC.Solid-State Electron,1999,43(2):199 |
| [17] | KonstantinovAO.Influence oftemperature on impact ionization and avalanche breakdown in silicon carbide.Soviet Phys Semicond,1989,23(1):31 |
| [18] | Khan I A,Cooper J A Jr.Measurement of high-field electron transport in silicon carbide.IEEE Trans Electron Devices,2000,47:269 |
| [19] | Electronic archive:New semiconductor materials,characteristics and properties[online],Available:http://www.ioffe.ru/SVA/NSM/Semicond/SiC/ |
| [20] | Dash G N,Pati S P.A generalized simulation method for MITATT-mode operation and studies on the influence of tunnel current on IMPATT properties.Semicond Sci Technol,1992,7:222 |
| [21] | Dash G N,Mishra J K,Panda A K.Noise in mixed tunneling avalanched transit time (MITATT) diodes.Solid-State Electron,1996,39:1473 |
| [22] | Mishra J K,Dash G N,Pattanaik S R,et al.Computer simulation study on the noise and millimeter wave properties of InP/GaInAs heterojunction double Avalanche region IMPATT diode.Solid-State Electron,2004,48(3):401 |
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