参考文献
| [1] | Lester S D,Ponce F A,Graford M G,et al.High dislocation densities in high efficiency GaN-based light-emitting diodes.Appl Phys Lett,1995,66:1249 |
| [2] | Yang Y,Cao X A,Yan C.Investigation of the nonthermal mechanism of efficiency rolloff in InGaN light-emitting diodes.IEEE Trans Electron Devices,2008,55:1771 |
| [3] | Iveland J,Martinelli L,Peretti J,et al.Direct measurement of auger electrons emitted from a semiconductor light-emitting diode under electrical injection:identification of the dominant mechanism for efficiency droop.Phys Rev Lett,2013,110:177406 |
| [4] | Kim M H,Schubert M F,Dai Q,et al.Origin of efficiency droop in GaN-based light-emitting diodes.Appl Phys Lett,2007,91:183507 |
| [5] | Mukai T,Yamada M,Nakamura S J.Characteristics of InGaN-based UV/blue/green/amber/red light-emitting diodes.Jpn J Appl Phys Part 1,1999,38:3976 |
| [6] | Masui H,Kroemer H,Schmidt M C,et al.Electroluminescence efficiency of-oriented InGaN-based light-emitting diodes at low temperature.J Phys D:Appl Phys,2008,41:0822001 |
| [7] | Choi S,Ji M H,Kim J,et al.Efficiency droop due to electron spill-over and limited hole injection in Ⅲ-nitride visible light-emitting diodes employing lattice-matched InAlN electron blocking layers.Appl Phys Lett,2012,101:161110 |
| [8] | Bertazzi F,Goano M,Bellotti E.Numerical analysis of indirect Auger transitions in InGaN.Appl Phys Lett,2012,101:011111 |
| [9] | Cao X A,Stokes E B,Sandvik P M,et al.Diffusion and tunneling currents in GaN/InGaN multiple quantum well light-emitting diodes.IEEE Electron Device Lett,2002,23:535 |
| [10] | Piprek J.Semiconductor optoelectronic devices:introduction to physics and simulation.Academic Press,2007 |
| [11] | Shao X J,Lu H,Chen D J,et al.Efficiency droop behavior of GaN-based light emitting diodes under reverse-current and high-temperature stress.Appl Phys Lett,2009,95:163504 |
| [12] | Yan D W,Lu H,Chen D J,et al.Forward tunneling current in GaN-based blue light-emitting diodes.Appl Phys Lett,2010,96:083504 |
| [13] | Masui H,Sato H,Asamizu H,et al.Radiative recombination efficiency of InGaN-based light-emitting diodes evaluated at various temperatures and injection currents.Jpn J Appl Phys,2007,46:L627 |
| [14] | Piprek J.Efficiency droop in nitride-based light-emitting diodes.Phys Status Solid A,2010,207:2217 |
| [15] | Yang Y,Cao X A,Yan C H.Rapid efficiency roll-off in high-quality green light-emitting diodes on freestanding GaN substrates.Appl Phys Lett,2009,94:041117 |
| [16] | Schubert M F,Chhajed S,Kim J K,et al.Effect of dislocation density on efficiency droop in GalnN/GaN light-emitting diodes.Appl Phys Lett,2007,91:231114 |
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