参考文献
[1] | Zhao Y L;Zhao C H;Tong Y.Spinel-structured Ni-free Zn0.9CuxMn2.1-xO4 (0.1 ≤ x ≤ 0.5)thermistors of negative temperature coefficient[J].Journal of Electroceramics,201331:286. |
[2] | Wang J H;Yao J C;Chen Z Y.Effects of Sr-doping on the electrical properties of MnCoNiO4 NTC ceramics[J].J Mater Sci:Mater Electron,201324(02):622. |
[3] | Zhang B;Zhao Q;Chang A M.MgAl2O4-LaCr0.5Mn0.5O3 composite ceramics for high temperature NTC thermistors[J].J Mater Sci:Mater Electron,201324:4452. |
[4] | Park K;Lee J K.The effect of ZnO content and sintering temperature on the electrical properties of Cu-containing Mn1.95-xNi0.45Co0.15Cu0.45ZnxO4 (0 ≤ x ≤ 0.3) NTC thermistors[J].Journal of Alloys and Compounds,2009475(1/2):513. |
[5] | Dong M J;Chen Z Y;Fan Y W.NTC and electrical properties of nickel and gold doped n-type silicon material[J].Journal of Semiconductors,200930(08):083007. |
[6] | Dong M J;Chen Z Y;Fan Y W.The thermal-sensitive characteristic and mechanism research of deep level impurity Au,Ni compensated n-type silicon material[J].J Funct Mater,200940(01):37. |
[7] | Zhang X T;Chen Z Y;Fan Y W.Study of NTCR based on doping Au and Pt into single crystal silicon[J].Electron Compon Mater,201130(06):29. |
[8] | Zhou B K;Fan Y W;Chen Z Y.Effects of iron-doping on resistivity of different Si materials[J].Electron Compon Mater,201332(07):10. |
[9] | Cai Z J;Ba W Z;Chen Z Y.Compensation characteristics of deep energy level impurity Zn to n-type silicon[J].Chinese Journal of Semiconductors,200526(06):1140. |
[10] | Chen Z Y;Ba W Z;Zhang J.Current oscillation properties of manganese doped silicon materials[J].Chinese Journal of Semiconductors,200627(09):1582. |
[11] | Istratov A A;Weber E R.Physics of copper in silicon[J].Journal of the Electrochemical Society,2002149(01):G21. |
[12] | Myers S M;Seibt M;Schr(o)ter W.Mechanisms of transition-metal gettering in silicon[J].Journal of Applied Physics,200088(07):3795. |
[13] | Cao B;Bao L M;Li G P.The diffusion and interface of Cu and Si in Cu/SiO2/Si(100) systems[J].Vacuum & Cryogenics,200612(03):137. |
[14] | Cao B;Bao L M;Li G P.Diffusion and interface reaction of Cu and Si in Cu/SiO2/Si(111) systems[J].ACTA PHYSICA SINICA,200655(12):6650. |
[15] | Cui Z M;Ba W Z;Chen Z Y.Study of manganese doped ptype single crystal silicon in the Daubing source[J].Electron Compon Mater,200524(06):21. |
[16] | Istratov A A;Weber E R.Electrical properties and recombination activity of copper,nickel and cobalt in silicon[J].Applied Physics A(Materials Science and Processing),199866(02):123. |
[17] | Nakamura M;Iwasaki H.Copper complexes in silicon[J].Journal of Applied Physics,199986(10):5372. |
[18] | Tao M D.Interchangeable thermistor[J].J Instr Mater,198415(04):50. |
[19] | LiuH C;TaoM D;Feng Z H.Silicon single crystal thermistors for suppressing inrush current[J].Electron Compon Mater,200423(02):18. |
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