参考文献
[1] | Tse M L, Liu Z Y, Cho L H, et al.Superlattice microstructured optical fiber.Materials, 2014, 7:4567,2014. |
[2] | Davies J H.The physics of low dimensional semiconductors.Cambridge:Cambridge University Press, 1998,1998. |
[3] | Vasilopoulos P, Peeters F M, Aitelhabti D.Quantum tunability of superlattice minibands.Phys Rev B, 1990, 41(10):21,1990. |
[4] | Einevoll G T, Hemmer P C.Superlattice minibands-explicit formulae for band gaps and effective masses.Semicond Sci Technol, 1991, 6:590,1991. |
[5] | Peeters F M, Vasilopoulos P.New method of controlling the gaps between the minibands of a superlattice.Appl Phys Lett, 1989, 55:11,1989. |
[6] | Ando T, Fowler A B, Stem F.Electronic properties of two dimensional systems.Rev Modem Phys, 1982, 54:437,1982. |
[7] | Gao S W, Cao J C, Feng S L.An emphasis of electron energy calculation in quantum wells.Commun Theor Phys, 2004, 43(3):435,2004. |
[8] | Hao Ya-Fei.Spin-orbit interaction in coupled quantum wells[J].中国物理B(英文版),2013(01):472-476. |
[9] | Xia C S, Simon L Z M, Li Z Q, et al.Effect ofmultiquantum barriers in performance enhancement of GaN-based light-emitting diodes.Appl Phys Lett, 2013, 102:013507,2013. |
[10] | Zhang J Y, Cai L E, Zhang B P, et al.Efficient hole transport in asymmetric coupled InGaN multiple quantum wells.Appl Phys Lett, 2009, 95:161110,2009. |
[11] | Na J H, Taylor R A, Lee K H, et al.Dependence of carrier localization in InGaN/GaN multiple-quantum wells on well thickness.Appl Phys Lett, 2006, 89:253120,2006. |
[12] | Ko T S, Lu T C, Wang T C, et al.Optical study of a-plane InGaN/GaN multiple quantum wells with different well widths grown by metal-organic chemical vapor deposition.J Appl Phys, 2008, 104:093106,2008. |
[13] | Ryou J H, Yoder P D, Liu J, et al.Control of quantum-confined stark effect in InGaN-based quantum wells.IEEE J Sel Top Quantum Electron, 2009, 15:1080,2009. |
[14] | Taheri S M, Fischer S, F(o)rster S.Routes to nanoparticle-polymer supedattices.Polymers, 2011, 3:662,2011. |
[15] | Subudhi P K, Palo S, Sahu T.Effect of strain on multisubband electron transport in GaAs/InGaAs coupled quantum well structures.Superlattices and Microstructures, 2012, 51 (3):430,2012. |
[16] | Adachi S.Material parameters for use in research and device applications.J Appl Phys, 1985, 58(3):R1,1985. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分:
-
10%
-
20%
-
30%
-
40%
-
50%