半导体学报（英文版）, 2015, 36(12): 91-96. doi: 10.1088/1674-4926/36/12/124004

基金项目: Project supported by the National High Technology Research and Development Program of China (No.2014AA052601) and the National Natural Science Foundation of China (No.51277060).

An insulated gate bipolar transistor with surface n-type barrier

Keywords： breakdown voltage

参考文献

[1]	Jiang, Mengxuan;Yin, Xin;Shuai, Zhikang;Wang, Jun;Shen, Z. John.An Insulated-Gate Bipolar Transistor With a Collector Trench Electron Extraction Channel[J].IEEE Electron Device Letters,20159(9):935-937.
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[6]	Ma Rongyao;Li Zehong;Hong Xin;Zhang Bo.Carrier stored trench-gate bipolar transistor with P-floating layer[J].半导体学报,2010(02):14-18.
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