参考文献
| [1] | Nayak P K,Jang J,Lee C,et al.Effects of Li doping on the performance and environmental stability of solution processed ZnO thin film transistors.Appl Phys Lett,2009,95(7):193503,2009. |
| [2] | Tsay C Y,Fan K S.Optimization of Zr-doped ZnO thin films prepared by sol-gel method.Mater Trans,2008,49(8):1900,2008. |
| [3] | Moon Y K,Lee S,Park J W,et ai.Characteristics of ZnO-based TFT using La2 O3 high-k dielectrics.Journal of the Korean Physical Society,2009,55(5):1906,2009. |
| [4] | You H C,Lin Y H.Investigation of the sol-gel method on the flexible ZnO device.International Journal of Electrochemical Society,2012,7:9085,2012. |
| [5] | Shekar B C,Lee J,Rhee S W.Organic thin film transistors:materials,processes and devices.Korean Journal of Chemical Engineering.2004,21(1):267,2004. |
| [6] | Hoffman R L,Norris B J,Wager J F.ZnO-based transparent thinfilm transistors.Appl Phys Lett,2003,82:733,2003. |
| [7] | Chang S,Song Y W,Lee S,et al.Efficient suppression of charge trapping in ZnO-based transparent thin film transistors with novel Al2O3/HfO2/Al2O3 structure.Appl Phys Lett,2008,92:192104,2008. |
| [8] | Nishii J,Hossain F M,Takagi S,et al.High mobility thin film transistors with transparent ZnO channels.Jpn J Appl Phys,2003,42:L347,2003. |
| [9] | Zhang X H,Domercq B,Wang X D,et al.High-performance pentacene field-effect transistors using Al2O3 gate dielectrics prepared by atomic layer deposition (ALD).Org Electron,2007,8(6):718,2007. |
| [10] | Chang M F,Lee P T,McAlister S P,et al.Small-subthresholdswing and low-voltage flexible organic thin-film transistors which use HfLaO as the gate dielectric.IEEE Electron Device Lett,2009,30(2):133,2009. |
| [11] | Avis C,Jang J.High-performance solution processed oxide TFT with aluminum oxide gate dielectric fabricated by a sol-gel method.J Mater Chem,2011,21:10649,2011. |
| [12] | Lee J,Kim J H,Seongil I.Pentacene thin-film transistors with A12O3+x gate dielectric films deposited on indium-tin-oxide glass.Appl Phys Lett,2003,83(13):2689,2003. |
| [13] | Oh M S,Lee K,Song J H,et al.Improving the gate stability of ZnO thin-film transistors with aluminum oxide dielectric layers.International Journal of Electrochemical Society,2008,155(12):H1009,2008. |
| [14] | Chu J B,Huang S M,Zhang D W,et al.Nanostructured ZnO thin films by chemical bath deposition in basic aqueous ammonia solutions for photovoltaic applications.Appl Phys A,2009,95(3):849,2009. |
| [15] | Hodes G.Chemical solution deposition of semiconductor films.New York:Marcel Dekker,2003,2003. |
| [16] | Samuel Tolansky,Surface micro topography.London:Longranans,1960,1960. |
| [17] | Shekar B C,Lee J,Rhee S W.Organic thin film transistors:materials,processes and devices.Korean Journal Chemical Engineering,2004,21(1):267,2004. |
| [18] | Seo J H,Kwon J H,Shin S I,et al.Organic thin film transistors with polyvinyl alcohol treated dielectric surface.Semicond Sci Technol,2007,22(9):1039,2007. |
| [19] | Nayak P K,Kim J,Lee C,et al.Performance of top-gate thin film transistors with solution processed ZnO channel layer and PVP gate dielectric.Physica Status Solidi A,2010,207(7):1664,2010. |
| [20] | Vanheusden K,Warren W L,Seager C H,et al.Mechanisms behind green photoluminescence in ZnO phosphor powders.J Appl Phys,1996,79(10):7983,1996. |
| [21] | Lin B,Fu Z,Jia Y.Erratum:green luminescent center in undoped zinc oxide films deposited on silicon substrates.Appl Phys Lett,2001,79:943,2001. |
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