半导体学报（英文版）, 2015, 36(9): 58-61. doi: 10.1088/1674-4926/36/9/094003

基金项目: Project supported by the National Natural Science Foundation of China (No.61234006) and the State Grid of China (No.sgri-wd-71-14-003).

Effect of post oxidation annealing in nitric oxide on interface properties of 4H-SiC/SiO2 after high temperature oxidation

Keywords： C-V characteristics

参考文献

[1]	K. Fukuda;S. Suzuki;T. Tanaka.Reduction of interface-state density in 4H-SiC n-type metal-oxide-semiconductor structures using high-temperature hydrogen annealing[J].Applied physics letters,200012(12):1585-1587.
[2]	Zhu Qiaozhi;Wang Dejun.Effects of wet-ROA on shallow interface traps of n-type 4H-SiC MOS capacitors[J].半导体学报（英文版）,2014(02):32-35.
[3]	M.Hema Lata Rao;N.V.L.Narasimha Murty.An improved analytical model of 4H-SiC MESFET incorporating bulk and interface trapping effects[J].半导体学报（英文版）,2015(01):64-75.
[4]	G. Y. Chung;C. C. Tin;J. R. Williams;K. McDonald;R. K. Chanana;Robert A. Weller;S. T. Pantelides;Leonard C. Feldman;O. W. Holland;M. K. Das;John W. Palmour.Improved inversion channel mobility of 4H-SiC MOSFETs following high temperature annneals in nitric oxide[J].IEEE Electron Device Letters,20014(4):176-178.
[5]	S. Dhar;Y. W. Song;L. C. Feldman;T. Isaacs-Smith;C. C. Tin;J. R. Williams;G. Chung;T. Nishimura;D. Starodub;T. Gustafsson;E. Garfunkel.Effect of nitric oxide annealing on the interface trap density near the conduction bandedge of 4H-SiC at the oxide/(1120) 4H-SiC interface[J].Applied physics letters,20049(9):1498-1500.
[6]	Atthawut Chanthaphan;Takuji Hosoi;Shuhei Mitani;Yuki Nakano;Takashi Nakamura;Takayoshi Shimura;Heiji Watanabe.Investigation of unusual mobile ion effects in thermally grown SiO_(2) on 4H-SiC(0001) at high temperatures[J].Applied physics letters,201225(25):252103-1-252103-4.
[7]	Kurimoto H;Shibata K;Kimura C;Aoki H;Sugino T.Thermal oxidation temperature dependence of 4H-SiC MOS interface[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,20065(5):2416-2420.
[8]	Lelis A. J.;Habersat D.;Green R.;Ogunniyi A.;Gurfinkel M.;Suehle J.;Goldsman N..Time Dependence of Bias-Stress-Induced SiC MOSFET Threshold-Voltage Instability Measurements[J].IEEE Transactions on Electron Devices,20088(8):1835-1840.
[9]	Yan Hongli;Jia Renxu;Tang Xiaoyan;Song Qingwen;Zhang Yuming.Effect of re-oxidation annealing process on the SiO2/SiC interface characteristics[J].半导体学报（英文版）,2014(06):128-131.
[10]	L.K. Swanson;P. Fiorenza;F. Giannazzo.Effects of a post-oxidation annealing in nitrous oxide on the morphological and electrical properties of SiO_2/4H-SiC interfaces[J].Materials Science Forum,2013:719-722.
[11]	Atthawut Chanthaphan;Takuji Hosoi;Yuki Nakano;Takashi Nakamura;Takayoshi Shimura;Heiji Watanabe.Understanding and controlling bias-temperature instability in SiC metal-oxide-semiconductor devices induced by unusual generation of mobile ions[J].Applied physics letters,20139(9):093510-1-093510-5.
[12]	Zhang, E. X..Bias-Temperature Instabilities in 4H-SiC Metal–Oxide–Semiconductor Capacitors[J].IEEE transactions on device & materials reliability,20122(2):391-398.
[13]	Xiao Shen;En Xia Zhang;Cher Xuan Zhang;Daniel M. Fleetwood;Ronald D. Schrimpf;Sarit Dhar;Sei-Hyung Ryu;Sokrates T. Pantelides.Atomic-scale origins of bias-temperature instabilities in SiC-SiO_(2) structures[J].Applied physics letters,20116(6):063507-1-063507-3.

上一张下一张

上一张下一张

计量

下载量()
访问量()

作者相关

在本站搜索
在百度学术搜索
在万方数据库搜索
在CNKI搜索

文章评分

您的评分：
1

0%
2

0%
3

0%
4

0%
5

0%