半导体学报（英文版）, 2016, 37(1): 69-72. doi: 10.1088/1674-4926/37/1/014007

基金项目: Project supported by the National Natural Science Foundation of China (Nos.61377020, 61376089, 61223005, 61176126) and the National Science Fund for Distinguished Young Scholars (No.60925017).

Suppression of electron leakage in 808 nm laser diodes with asymmetric waveguide layer

Keywords： quantum well

参考文献

[1]	Zhu Zhen;Zhang Xin;Li Peixu;Wang Gang;Xu Xiangang.Voltage reduction of 808 nm GaAsP/(Al)GaInP laser diodes with GaInAsP intermediate layer[J].半导体学报（英文版）,2015(01):105-107.
[2]	Lock D;Sweeney SJ;Adams AR;Deubner S;Klopf F;Reithmaier JP;Forchel A.Carrier leakage suppression utilising short-period superlattices in 980 nm InGaAs/GaAs quantum well lasers[J].Physica status solidi, B. Basic research,200414(14):3405-3409.
[3]	Muhammad Nawaz;Komet Permthamassin;Carina Zaring;Magnus Willander.A theoretical optimization of GaInP/GaInAs/GaAs based 980 nm Al-free pump laser using self-consistent numerical simulation[J].Solid-State Electronics,20032(2):291-295.
[4]	Yen SH;Chen ML;Kuo YK.Gain and threshold properties of InGaAsN/GaAsN material system for 1.3-mu m semiconductor lasers[J].Optics & Laser Technology,20077(7):1432-1436.

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