半导体学报（英文版）, 2016, 37(2): 100-104. doi: 10.1088/1674-4926/37/2/024011

基金项目: Project supported by the National High Technology Research and Development Program of China (No.2014AA052601) and the National Natural Science Foundation of China (No.51277060).

A high-conductivity insulated gate bipolar transistor with Schottky hole barrier contact

Keywords： breakdown voltage

参考文献

[1]	Jiang, Mengxuan;Yin, Xin;Shuai, Zhikang;Wang, Jun;Shen, Z. John.An Insulated-Gate Bipolar Transistor With a Collector Trench Electron Extraction Channel[J].IEEE Electron Device Letters,20159(9):935-937.
[2]	Zhao Qifeng;Zhuang Yiqi;Bao Junlin;Hu Wei.Model of radiation-induced gain degradation of NPN bipolar junction transistor at different dose rates[J].半导体学报（英文版）,2015(06):68-71.
[3]	Xu Xiangming;Huang Jingfeng;Yu Han;Qian Wensheng;Zhou Zhengliang;Han Bo;Wang Yong.Design of high reliability RF-LDMOS by suppressing the parasitic bipolar effect using enhanced p-well and double epitaxy[J].半导体学报（英文版）,2015(06):93-98.
[4]	Zhang Jinxin;Guo Hongxia;Wen Lin;Guo Qi;Cui Jiangwei;Wang Xin;Deng Wei.3-D simulation of angled strike heavy-ion induced charge collection in silicon-germanium heterojunction bipolar transistors[J].半导体学报（英文版）,2014(04):56-61.
[5]	Zhu Liheng;Chen Xingbi.Novel reverse conducting insulated gate bipolar transistor with anti-parallel MOS controlled thyristor[J].半导体学报（英文版）,2014(7):48-51.
[6]	G. Song;M. Y. Ali;M. Tao.A High Schottky-Barrier of 1.1 eV Between Al and S-Passivated p-Type Si(100) Surface[J].IEEE Electron Device Letters,20071(1):71-73.
[7]	Alptekin, E.;Ozturk, M. C..Tuning of the Nickel Silicide Schottky Barrier Height on p-Type Silicon by Indium Implantation[J].IEEE Electron Device Letters,200912(12):1272-1274.

上一张下一张

上一张下一张

计量

下载量()
访问量()

作者相关

在本站搜索
在百度学术搜索
在万方数据库搜索
在CNKI搜索

文章评分

您的评分：
1

0%
2

0%
3

0%
4

0%
5

0%