欢迎登录材料期刊网

材料期刊网

高级检索

参考文献

[1] Huang, S.;Jiang, Q.;Yang, S.;Tang, Z.;Chen, K. J..Mechanism of PEALD-Grown AlN Passivation for AlGaN/GaN HEMTs: Compensation of Interface Traps by Polarization Charges[J].IEEE Electron Device Letters,20132(2):193-195.
[2] Chang Liu;Eng Fong Chor;Leng Seow Tan.Investigations of HfO_(2)/AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors[J].Applied physics letters,200617(17):173504-1-173504-3-0.
[3] Bruce M. Green;Kenneth K. Chu;E. Martin Chumbes;Joseph A. Smart;James R. Shealy;Lester F. Eastman.The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMT's[J].IEEE Electron Device Letters,20006(6):268-270.
[4] N. Sghaier;M. Trabelsi;N. Yacoubi;J.M. Bluet;A. Souifi;G. Guillot;C. Gaquiere;J.C. DeJaeger.Traps centers and deep defects contribution in current instabilities for AlGaN/GaN HEMT's on silicon and sapphire substrates[J].Microelectronics journal,20064(4):363-370.
[5] Xiao-Hua Ma;Jie-Jie Zhu;Xue-Yang Liao;Tong Yue;Wei-Wei Chen;Yue Hao.Quantitative characterization of interface traps in Al_2O_3/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors by dynamic capacitance dispersion technique[J].Applied physics letters,20133(3):033510-1-033510-3.
[6] J. P. Ibbetson;P. T. Fini;K. D. Ness.Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors[J].Applied physics letters,20002(2):250-252.
[7] Kola S.;Golio J.M..An analytical expression for Fermi level versus sheet carrier concentration for HEMT modeling[J].IEEE Electron Device Letters,19883(3):136-138.
[8] Kanjalochan Jena;Raghunandan Swain;T.R.Lenka.Impact of barrier thickness on gate capacitance——modeling and comparative analysis of GaN based MOSHEMTs[J].半导体学报(英文版),2015(3):60-64.
[9] Swain, Raghunandan;Jena, Kanjalochan;Lenka, T. R..Interface DOS dependent analytical model development for DC characteristics of normally-off AlN/GaN MOSHEMT[J].Superlattices and microstructures,2015:54-65.
上一张 下一张
上一张 下一张
计量
  • 下载量(0)
  • 访问量(104)
文章评分
  • 您的评分:
  • 1
    0%
  • 2
    0%
  • 3
    0%
  • 4
    0%
  • 5
    0%