半导体学报（英文版）, 2016, 37(5): 65-68. doi: 10.1088/1674-4926/37/5/054009

基金项目: Project supported by the Strategic Priority Research Program of the Chinese Academy of Sciences (No.XDA09020402), the National Key Basic Research Program of China (Nos.2013CBA01900, 2010CB934300, 2011CBA00607, 2011CB932804), the National Integrate Circuit Research Program of China (No.2009ZX02023-003), the National Natural Science Foundation of China (No.61176122, 61106001,61261160500, 61376006), and the Science and Technology Council of Shanghai (Nos.12nm0503701, 13DZ2295700, 12QA1403900,13ZR1447200, 14ZR1447500).

Endurance characteristics of phase change memory cells

Keywords： phase change memory

参考文献

[1]	Horak J.;Novotny R.;Karamazov S.;Lostak P.;Drasar C..NON-STOICHIOMETRY OF THE CRYSTAL LATTICE OF ANTIMONY TELLURIDE[J].Physica Status Solidi, A. Applied Research,19952(2):549-556.
[2]	Daniele Ielmini;Andrea L. Lacaita;Agostino Pirovano;Fabio Pellizzer;Roberto Bez.Analysis of Phase Distribution in Phase-Change Nonvolatile Memories[J].IEEE Electron Device Letters,20047(7):507-509.

上一张下一张

计量

下载量()
访问量()

作者相关

在本站搜索
在百度学术搜索
在万方数据库搜索
在CNKI搜索

文章评分

您的评分：
1

0%
2

0%
3

0%
4

0%
5

0%

材料期刊网

Endurance characteristics of phase change memory cells

参考文献