半导体学报（英文版）, 2016, 37(7): 49-55. doi: 10.1088/1674-4926/37/7/074003

基金项目: Project supported by the National Natural Science Foundation of China (No.61434006).

fT=260 GHz and fmax=607 GHz of 100-nm-gate In0.52Al0.48As/In0.7Ga0.3As HEMTs with Gm.max=1441 mS/mm

Keywords： high electron mobility transistor

参考文献

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