参考文献
| [1] | Huili Xing;Y. Dora;A. Chini;S. Heikman;S. Keller;U. K. Mishra.High Breakdown Voltage AlGaN-GaN HEMTs Achieved by Multiple Field Plates[J].IEEE Electron Device Letters,20044(4):161-163. |
| [2] | Liu L.;Edgar JH..Substrates for gallium nitride epitaxy [Review][J].Materials Science & Engineering, R. Reports: A Review Journal,20023(3):61-127. |
| [3] | Cao Junsong;Lü Xin;Zhao Lubing;Qu Shuang;Gao We.Influence of initial growth conditions and Mg-surfactant on the quality of GaN film grown by MOVPE[J].半导体学报（英文版）,2015(02):34-37. |
| [4] | Kong Jing;Feng Meixin;Cai Jin;Wang Hui;Wang Huaibing;Yang Hui.GaN grown on nano-patterned sapphire substrates[J].半导体学报（英文版）,2015(4):26-29. |
| [5] | Zhao Danmei;Zhao Degang;Jiang Desheng;Liu Zongshun;Zhu Jianjun;Chen Ping;Liu Wei.Impact of GaN transition layers in the growth of GaN epitaxial layer on silicon[J].半导体学报（英文版）,2015(06):21-24. |
| [6] | Mao Qinghua;Liu Junlin;Wu Xiaoming;Zhang Jianli;Xiong Chuanbing;Mo Chunlan;Zhang Meng.Influence of growth rate on the carbon contamination and luminescence of GaN grown on silicon[J].半导体学报（英文版）,2015(9):26-29. |
| [7] | K. Okamoto;S. Inoue;N. Matsuki;T.-W. Kim;J. Ohta;M. Oshima;H. Fujioka;A. Ishii.Epitaxial growth of GaN films grown on single crystal Fe substrates[J].Applied physics letters,200825(25):251906-1-251906-3-0. |
| [8] | Freitas JA;Rowland LB;Kim J;Fatemi M.Properties of epitaxial GaN on refractory metal substrates[J].Applied physics letters,20079(9):91910-1-91910-3-0. |
| [9] | Epitaxial Growth Of Gan On Single-crystal Mo Substrates Using Hfn Buffer Layers[J].Journal of Crystal Growth,20095(5):1311-1315. |
| [10] | J. Arokiaraj;Cheong Kee Leong;Vivian Lixian;Anna Marie Yong;Wang Xincai.Bonding of GaN structures with Si(100) substrates using sequentially deposited NiAu metal layers[J].Applied physics letters,200812(12):124105-1-124105-3-0. |
| [11] | S. Gautier;T. Moudakir;G. Patriarche;D.J. Rogers;V.E. Sandana;F. Hosseini Teherani;P. Bove;Y. El Gmili;K. Pantzas;Suresh Sundaram;D. Troadec;P.L. Voss;M. Razeghi;A. Ougazzaden.Structural and compositional characterization of MOVPE GaN thin films transferred from sapphire to glass substrates using chemical liftoff and room temperature direct wafer bonding and GaN wafer scale MOVPE growth on ZnO-buffered sapphire[J].Journal of Crystal Growth,2013May 1(May 1):63-67. |
| [12] | Floyd P.D.;Chua C.L..Wafer fusion of infrared laser diodes to GaN light-emitting heterostructures[J].IEEE Photonics Technology Letters,199811(11):1539-1541. |
| [13] | Arokiaraj J;Soh CB;Wang XC;Tripathy S;Chua SJ.Integration of GaN thin films to SiO2-Si(100) substrates by laser lift-off and wafer fusion method[J].Superlattices and microstructures,20064/6(4/6):219-224. |
| [14] | Chung, J. W.;Lee, J.;Piner, E. L.;Palacios, T..Seamless On-Wafer Integration of Si(100) MOSFETs and GaN HEMTs[J].IEEE Electron Device Letters,200910(10):1015-1017. |
| [15] | Chung J. W.;Piner E. L.;Palacios T..N-Face GaN/AlGaN HEMTs Fabricated Through Layer Transfer Technology[J].IEEE Electron Device Letters,20092(2):113-116. |
| [16] | J. Blaesing;A. Reiher;A. Dadgar;A. Diez;A. Krost.The origin of stress reduction by low-temperature AlN interlayers[J].Applied physics letters,200215(15):2722-2724. |
| [17] | Stress and its effect on optical properties of GaN epilayers grown on Si(111), 6H-SiC(0001), and c-plane sapphire[J].Applied physics letters,20034(4):677-679. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%