半导体学报（英文版）, 2016, 37(8): 49-54. doi: 10.1088/1674-4926/37/8/084002

Design, fabrication and characterising of 100 W GaN HEMT for Ku-band application

Keywords： Ku-band

参考文献

[1]	Ren Chunjiang;Li Zhonghui;Yu Xuming;Wang Quanhui;Wang Wen;Chen Tangsheng;Zhang Bin.Field plated 0.15μm GaN HEMTs for millimeter-wave application[J].半导体学报（英文版）,2013(06):49-53.
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[3]	Y. Dora;A. Chakraborty;L. McCarthy;S. Keller;S. P. DenBaars;U. K. Mishra.High Breakdown Voltage Achieved on AlGaN/GaN HEMTs With Integrated Slant Field Plates[J].IEEE Electron Device Letters,20069(9):713-715.
[4]	任春江;王泉慧;刘海琪;王雯;李忠辉;孔月婵;蒋浩;钟世昌;陈堂胜;张斌.0.5μm AlGaN/GaN HEMT及其应用[J].固体电子学研究与进展,2011(5):433-437.
[5]	Horio K;Yonemoto K;Takayanagi H;Nakano H.Physics-based simulation of buffer-trapping effects on slow current transients and current collapse in GaN field effect transistors[J].Journal of Applied Physics,200512(12):24502-1-24502-7-0.

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