采用密度泛函离散变分方法计算了Pb掺杂Bi位对[Bi1.68Ca2O4]RS[CoO2]1.69的电子结构和化学键的影响,并讨论了它们与热电性能之间的关系.计算结果表明,掺Pb体系的电子结构表现出半导体特征,与未掺杂的相比,能隙变窄;掺Pb后,在-4.5~1.8 eV的能量范围内,高能态Co 3d与低能态O 2p存在着杂化作用,Pb 6p在费米能级附近的贡献增强.通过计算键级和分子波函数轨道可知,体系的计算键级在ab面和c轴方向表现出各向异性特征,掺Pb后,Co-O、Pb(Bi)-O均比未掺杂体系减弱,而Bi(Pb)-Bi的键性增强.由此推断,掺Pb体系的热电性能将有所改善.
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