氮化铁薄膜中反常霍尔效应的研究

材料导报, 2015, 29(8): 16-24. doi: 10.11896/j.issn.1005-023X.2015.08.004

氮化铁薄膜中反常霍尔效应的研究

曹志慧 ^1, , 任山令 ^2, , 李永涛 ^3, , 李兴鳌 ^4,

1.南京邮电大学电子科学与工程学院,南京,210003

2.南京邮电大学电子科学与工程学院,南京210003;南京邮电大学理学院,南京210003

3.南京邮电大学理学院,南京,210003

4.南京邮电大学材料科学与工程学院,南京,210003

基金项目: 国家自然科学基金(51172110,51372119)

关键词：磁控溅射方法 , 反常霍尔效应 , 标度律 , 斜散射

Anomalous Hall Effect of Iron Nitride Thin Films

Keywords： magnetron sputtering method , anomalous Hall effect , scaling law , skew scattering

通过磁控溅射方法制备了氮含量不同的氮化铁薄膜,观察到随着氮含量的增加,薄膜的导电机制从金属到半导体的转变.霍尔电阻的测量表明在高电阻区域反常霍尔电阻率与纵向电阻率的标度律为线性,即反常霍尔效应遵循斜散射机制,但相应的反常霍尔电导率与纵向电导率的关系不总是线性.

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氮化铁薄膜中反常霍尔效应的研究

Anomalous Hall Effect of Iron Nitride Thin Films

参考文献