利用固相反应法制备了Al掺杂的Sr14 (Cu1-x Alx)24 O41(x=0,0.01,0.02,0.03)系列多晶样品.X射线衍射结果表明所有样品均为单相,Al掺杂使样品晶格常数a、b发生涨落,但使晶格常数c1adder逐渐减小.X射线光电子能谱结果表明Al掺杂对体系内Sr、Cu、O离子价态不存在影响,并且Al离子以+3价的形式替代了Sr14 Cu24 O41体系内的Cu2+,不存在其他混合价态.电阻率测量结果表明所有样品均呈半导体性,Al掺杂使体系电阻率升高.进一步分析表明所有样品存在一渡越温度Tρ,Al掺杂使Tρ发生微弱涨落.在Tρ以上,自旋梯子中单个空穴热激活对体系电导存在贡献.在Tρ以下,自旋梯子中空穴的变程跳跃电导对体系电导存在贡献.实验数据拟合结果表明Al掺杂使体系内单个空穴热激活能△以及局域态势垒参数T0逐渐增大.
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