Cu2ZnSnS4(CZTS)具有与CIGS相似的结构,其直接带隙宽度为1.45~1.6 eV,吸收系数则高于104 cm-1,构成元素丰富且无毒,因此其作为一种P型半导体材料,被认为是最有希望替代CIGS的材料之一.以去离子水和无水乙醇作为溶剂,采用溶胶-凝胶法(Sol-gel)在玻璃基底上制得了CZTS薄膜,利用X射线衍射仪、拉曼光谱仪、扫描电镜和紫外可见光谱对样品进行了表征,并讨论了烘焙温度对薄膜结构和形貌的影响.结果表明当热处理温度达到200℃时得到了黑色的CZTS薄膜,其禁带宽度为1.45 eV,经过EDS分析制得的薄膜的元素比Cu:Zn:Sn:S接近2:1:1:4,这与CZTS的理论值是一致的,但是薄膜中存在少量的氯元素,同时适当降低前期的烘焙温度可以提高薄膜的致密性.
Cu2 ZnSnS4 (CZTS)has a similar structure with CIGS as a P-type semiconductor material,its direct band gap is about 1.45-1.6 eV and its absorption coefficient is higher than 104 cm-1 ,its constituent elements are a-bundant and non-toxic,therefore it is considered to be one of the most promising alternative materials which can re-place CIGS.Water and ethanol were used as solvent,CZTS thin films were prepared by the sol-gel method on the glass substrates.X-ray diffraction (XRD),Raman spectroscopy,scanning electron microscopy (SEM)and UV-Vis-NIR spectroscopy were used to characterized the samples.The influence of bake temperature on the films′structure and morphology was studied.The results indicate that the black CZTS films were obtained when the heating tempera-ture reached 200 ℃,the band-gap energy of the film is 1.45 eV.The EDS analysis indicated that the composition of Cu:Zn:Sn:S in the resulting films was near 2:1:1:4,however,there were some residual Cl- ions in the films. At the same time,reducing the pre-baking temperature appropriately can improve the density of the film.
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