金刚石薄膜有着高的热导率，高的介质击穿场强，高的载流子迁移率以及宽的禁带等优点，是非常理想的功能材料。掺杂使金刚石薄膜具有独特的电学和热学性能，使其在半导体领域具有广阔的应用前景，近年来成为国内外研究的热点之一。综述了金刚石薄膜 P 型掺杂和 N 型掺杂的研究现状，对金刚石薄膜 N 型掺杂研究中存在的问题进行了分析和探索，并对 N 型金刚石的前景进行了展望。
Diamond film with the advantages such as high thermal conductivity,high dielectric breakdown vol-tage,high carrier mobility and wide band gap etc,is a very promising functional material.The electrical and thermal properties of doped diamond thin films are unique,therefore it has vast potential for future application in the field of semiconductor.Doped diamond thin films have become a hot research topic both at home and abroad in recent years. In this paper,the research status of P-type doping and N-type doping for diamond thin films is reviewed.The prob-lems existing in the research on N-type diamond are discussed as well the future prospect.
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