采用水流分级和高能纳米冲击磨对原始SiC粉料进行微纳米粉体加工.研究结果表明:水流分级得到纯度98.42％、中位粒径0.404μm的SiC粉体,比表面积由0.8879m2/g提高到8.0321m2/g;高能冲击磨得到纯度95.5％、中位粒径0.257μm的SiC粉体,比表面积由0.8879m2/g提高到8.2773m2/g,SiC的粒径及比表面积达到半导体制造业用微纳米碳化硅粉体的技术标准.纯度分析表明碳化硅粉体的水流分级未引入杂质,化学成分基本不变;SiC粉体冲击磨加工纯度下降,其他杂质含量偏高.粉体形貌分析表明原始SiC粉料形貌为非球形,粒度分布不均匀,水流分级和冲击磨加工碳化硅粉体形貌为非球形,粒度分布较加工前更均匀.
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